Absence of dislocation motion in 3C-SiC pn diodes under forward bias

K. M. Speer, D. J. Spry, A. J. Trunek, P. G. Neudeck, M. A. Crimp, J. T. Hile, C. Burda, P. Pirouz

    Research output: Research - peer-reviewArticle

    • 10 Citations

    Abstract

    pn diodes have recently been fabricated from 3C-SiC material heteroepitaxially grown atop on-axis 4H-SiC mesa substrate arrays [1,2]. Using an optical emission microscope (OEM), we have investigated these diodes under forward bias, particularly including defective 3C-SiC films with in-grown stacking faults (SFs) nucleated on 4H-SiC mesas with steps from screw dislocations. Bright linear features are observed along directions in electroluminescence (EL) images. These features have been further investigated using electron channeling contrast imaging (ECCI) [3]. The general characteristics of the ECCI images - together with the bright to dark contrast reversal with variations of the excitation error - strongly suggest that the bright linear features are partial dislocations bounding triangular SFs in the 3C-SiC films. However, unlike partial dislocations in 4H-SiC diodes whose recombination - enhanced dislocation motion serves to expand SF regions, all the partial dislocations we observed during the electrical stressing were immobile across a wide range of current injection levels (1 to 1000 A/cm2).

    LanguageEnglish (US)
    Pages223-226
    Number of pages4
    JournalMaterials Science Forum
    Volume556-557
    StatePublished - 2007

    Profile

    Stacking faults
    Dislocations (crystals)
    Diodes
    diodes
    crystal defects
    Imaging techniques
    Electrons
    mesas
    electrons
    Screw dislocations
    Electroluminescence
    Microscopes
    Substrates
    Direction compound
    screw dislocations
    electroluminescence
    light emission
    microscopes
    injection
    excitation

    Keywords

    • 3C-SiC
    • Electroluminescence
    • Electron channeling contrast imaging
    • Partial dislocations
    • Stacking faults

    ASJC Scopus subject areas

    • Materials Science(all)

    Cite this

    Speer, K. M., Spry, D. J., Trunek, A. J., Neudeck, P. G., Crimp, M. A., Hile, J. T., ... Pirouz, P. (2007). Absence of dislocation motion in 3C-SiC pn diodes under forward bias. Materials Science Forum, 556-557, 223-226.

    Absence of dislocation motion in 3C-SiC pn diodes under forward bias. / Speer, K. M.; Spry, D. J.; Trunek, A. J.; Neudeck, P. G.; Crimp, M. A.; Hile, J. T.; Burda, C.; Pirouz, P.

    In: Materials Science Forum, Vol. 556-557, 2007, p. 223-226.

    Research output: Research - peer-reviewArticle

    Speer, KM, Spry, DJ, Trunek, AJ, Neudeck, PG, Crimp, MA, Hile, JT, Burda, C & Pirouz, P 2007, 'Absence of dislocation motion in 3C-SiC pn diodes under forward bias' Materials Science Forum, vol 556-557, pp. 223-226.
    Speer KM, Spry DJ, Trunek AJ, Neudeck PG, Crimp MA, Hile JT et al. Absence of dislocation motion in 3C-SiC pn diodes under forward bias. Materials Science Forum. 2007;556-557:223-226.
    Speer, K. M. ; Spry, D. J. ; Trunek, A. J. ; Neudeck, P. G. ; Crimp, M. A. ; Hile, J. T. ; Burda, C. ; Pirouz, P./ Absence of dislocation motion in 3C-SiC pn diodes under forward bias. In: Materials Science Forum. 2007 ; Vol. 556-557. pp. 223-226
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    abstract = "pn diodes have recently been fabricated from 3C-SiC material heteroepitaxially grown atop on-axis 4H-SiC mesa substrate arrays [1,2]. Using an optical emission microscope (OEM), we have investigated these diodes under forward bias, particularly including defective 3C-SiC films with in-grown stacking faults (SFs) nucleated on 4H-SiC mesas with steps from screw dislocations. Bright linear features are observed along directions in electroluminescence (EL) images. These features have been further investigated using electron channeling contrast imaging (ECCI) [3]. The general characteristics of the ECCI images - together with the bright to dark contrast reversal with variations of the excitation error - strongly suggest that the bright linear features are partial dislocations bounding triangular SFs in the 3C-SiC films. However, unlike partial dislocations in 4H-SiC diodes whose recombination - enhanced dislocation motion serves to expand SF regions, all the partial dislocations we observed during the electrical stressing were immobile across a wide range of current injection levels (1 to 1000 A/cm2).",
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