Anisotropic crystalline organic step-flow growth on deactivated Si surfaces

    Research output: Research - peer-reviewArticle

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    Abstract

    We report the first demonstration of anisotropic step-flow growth of organic molecules on a semiconducting substrate using metal phthalocyanine thermally deposited on the deactivated Si(111)-B √3×√3 R30 surface. With scanning probe microscopy and geometric modeling, we prove the quasiepitaxial nature of this step-flow growth that exhibits no true commensurism, despite a single dominant long-range ordered relationship between the organic crystalline film and the substrate, uniquely distinct from inorganic epitaxial growth. This growth mode can likely be generalized for a range of organic molecules on deactivated Si surfaces and access to it offers new potential for the integration of ordered organic thin films in silicon-based electronics.

    LanguageEnglish (US)
    Article number086107
    JournalPhysical Review Letters
    Volume110
    Issue number8
    DOIs
    StatePublished - Feb 20 2013

    Profile

    molecules
    microscopy
    scanning
    probes
    silicon
    thin films
    electronics
    metals

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Anisotropic crystalline organic step-flow growth on deactivated Si surfaces. / Wagner, Sean R.; Lunt, Richard R.; Zhang, Pengpeng.

    In: Physical Review Letters, Vol. 110, No. 8, 086107, 20.02.2013.

    Research output: Research - peer-reviewArticle

    @article{a2f0ea66d74a4d849a1421a2ce1edd78,
    title = "Anisotropic crystalline organic step-flow growth on deactivated Si surfaces",
    abstract = "We report the first demonstration of anisotropic step-flow growth of organic molecules on a semiconducting substrate using metal phthalocyanine thermally deposited on the deactivated Si(111)-B √3×√3 R30 surface. With scanning probe microscopy and geometric modeling, we prove the quasiepitaxial nature of this step-flow growth that exhibits no true commensurism, despite a single dominant long-range ordered relationship between the organic crystalline film and the substrate, uniquely distinct from inorganic epitaxial growth. This growth mode can likely be generalized for a range of organic molecules on deactivated Si surfaces and access to it offers new potential for the integration of ordered organic thin films in silicon-based electronics.",
    author = "Wagner, {Sean R.} and Lunt, {Richard R.} and Pengpeng Zhang",
    year = "2013",
    month = "2",
    doi = "10.1103/PhysRevLett.110.086107",
    volume = "110",
    journal = "Physical Review Letters",
    issn = "0031-9007",
    publisher = "American Physical Society",
    number = "8",

    }

    TY - JOUR

    T1 - Anisotropic crystalline organic step-flow growth on deactivated Si surfaces

    AU - Wagner,Sean R.

    AU - Lunt,Richard R.

    AU - Zhang,Pengpeng

    PY - 2013/2/20

    Y1 - 2013/2/20

    N2 - We report the first demonstration of anisotropic step-flow growth of organic molecules on a semiconducting substrate using metal phthalocyanine thermally deposited on the deactivated Si(111)-B √3×√3 R30 surface. With scanning probe microscopy and geometric modeling, we prove the quasiepitaxial nature of this step-flow growth that exhibits no true commensurism, despite a single dominant long-range ordered relationship between the organic crystalline film and the substrate, uniquely distinct from inorganic epitaxial growth. This growth mode can likely be generalized for a range of organic molecules on deactivated Si surfaces and access to it offers new potential for the integration of ordered organic thin films in silicon-based electronics.

    AB - We report the first demonstration of anisotropic step-flow growth of organic molecules on a semiconducting substrate using metal phthalocyanine thermally deposited on the deactivated Si(111)-B √3×√3 R30 surface. With scanning probe microscopy and geometric modeling, we prove the quasiepitaxial nature of this step-flow growth that exhibits no true commensurism, despite a single dominant long-range ordered relationship between the organic crystalline film and the substrate, uniquely distinct from inorganic epitaxial growth. This growth mode can likely be generalized for a range of organic molecules on deactivated Si surfaces and access to it offers new potential for the integration of ordered organic thin films in silicon-based electronics.

    UR - http://www.scopus.com/inward/record.url?scp=84874137742&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84874137742&partnerID=8YFLogxK

    U2 - 10.1103/PhysRevLett.110.086107

    DO - 10.1103/PhysRevLett.110.086107

    M3 - Article

    VL - 110

    JO - Physical Review Letters

    T2 - Physical Review Letters

    JF - Physical Review Letters

    SN - 0031-9007

    IS - 8

    M1 - 086107

    ER -