Anisotropic crystalline organic step-flow growth on deactivated Si surfaces

Research output: Contribution to journalArticle

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Abstract

We report the first demonstration of anisotropic step-flow growth of organic molecules on a semiconducting substrate using metal phthalocyanine thermally deposited on the deactivated Si(111)-B √3×√3 R30 surface. With scanning probe microscopy and geometric modeling, we prove the quasiepitaxial nature of this step-flow growth that exhibits no true commensurism, despite a single dominant long-range ordered relationship between the organic crystalline film and the substrate, uniquely distinct from inorganic epitaxial growth. This growth mode can likely be generalized for a range of organic molecules on deactivated Si surfaces and access to it offers new potential for the integration of ordered organic thin films in silicon-based electronics.

LanguageEnglish (US)
Article number086107
JournalPhysical Review Letters
Volume110
Issue number8
DOIs
StatePublished - Feb 20 2013

Profile

molecules
microscopy
scanning
probes
silicon
thin films
electronics
metals

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Anisotropic crystalline organic step-flow growth on deactivated Si surfaces. / Wagner, Sean R.; Lunt, Richard R.; Zhang, Pengpeng.

In: Physical Review Letters, Vol. 110, No. 8, 086107, 20.02.2013.

Research output: Contribution to journalArticle

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