Catalyst-free GaN nanowire nucleation: Correlation of temperature-dependent nanowire orientation and growth matrix changes

Kaylee McElroy, Virginia M. Ayres, Thomas R. Bieler, Benjamin W. Jacobs, Martin A. Crimp

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Growth orientation and type of internal structures are both observed to change abruptly as a function of growth temperature in catalyst free growth of gallium nitride nanowires. In the present work, corresponding temperature-dependent changes in the growth matrix substrate that can affect the availability of nucleation sites and influence the reactivity of constituent adatom materials in catalyst-free nanowire growth are investigated. The influence of Ga vapor pressure and an abrupt change in the availability of single versus molecular adatom constituents is identified as a possible controlling parameter.

LanguageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages71-76
Number of pages6
Volume1206
StatePublished - 2010
Event2009 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 30 2009Dec 4 2009

Other

Other2009 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/30/0912/4/09

Profile

Nanowires
nanowires
Nucleation
nucleation
catalysts
Catalysts
Adatoms
matrices
adatoms
Availability
availability
Gallium nitride
Temperature
temperature
Growth temperature
Vapor pressure
gallium nitrides
vapor pressure
reactivity
Substrates

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Catalyst-free GaN nanowire nucleation : Correlation of temperature-dependent nanowire orientation and growth matrix changes. / McElroy, Kaylee; Ayres, Virginia M.; Bieler, Thomas R.; Jacobs, Benjamin W.; Crimp, Martin A.

Materials Research Society Symposium Proceedings. Vol. 1206 2010. p. 71-76.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

McElroy, K, Ayres, VM, Bieler, TR, Jacobs, BW & Crimp, MA 2010, Catalyst-free GaN nanowire nucleation: Correlation of temperature-dependent nanowire orientation and growth matrix changes. in Materials Research Society Symposium Proceedings. vol. 1206, pp. 71-76, 2009 MRS Fall Meeting, Boston, MA, United States, 11/30/09.
McElroy K, Ayres VM, Bieler TR, Jacobs BW, Crimp MA. Catalyst-free GaN nanowire nucleation: Correlation of temperature-dependent nanowire orientation and growth matrix changes. In Materials Research Society Symposium Proceedings. Vol. 1206. 2010. p. 71-76.
@inproceedings{7c1a2378c9e84f0793cf730c406fd26e,
title = "Catalyst-free GaN nanowire nucleation: Correlation of temperature-dependent nanowire orientation and growth matrix changes",
abstract = "Growth orientation and type of internal structures are both observed to change abruptly as a function of growth temperature in catalyst free growth of gallium nitride nanowires. In the present work, corresponding temperature-dependent changes in the growth matrix substrate that can affect the availability of nucleation sites and influence the reactivity of constituent adatom materials in catalyst-free nanowire growth are investigated. The influence of Ga vapor pressure and an abrupt change in the availability of single versus molecular adatom constituents is identified as a possible controlling parameter.",
author = "Kaylee McElroy and Ayres, {Virginia M.} and Bieler, {Thomas R.} and Jacobs, {Benjamin W.} and Crimp, {Martin A.}",
year = "2010",
language = "English (US)",
isbn = "9781617387609",
volume = "1206",
pages = "71--76",
booktitle = "Materials Research Society Symposium Proceedings",

}

TY - GEN

T1 - Catalyst-free GaN nanowire nucleation

T2 - Correlation of temperature-dependent nanowire orientation and growth matrix changes

AU - McElroy,Kaylee

AU - Ayres,Virginia M.

AU - Bieler,Thomas R.

AU - Jacobs,Benjamin W.

AU - Crimp,Martin A.

PY - 2010

Y1 - 2010

N2 - Growth orientation and type of internal structures are both observed to change abruptly as a function of growth temperature in catalyst free growth of gallium nitride nanowires. In the present work, corresponding temperature-dependent changes in the growth matrix substrate that can affect the availability of nucleation sites and influence the reactivity of constituent adatom materials in catalyst-free nanowire growth are investigated. The influence of Ga vapor pressure and an abrupt change in the availability of single versus molecular adatom constituents is identified as a possible controlling parameter.

AB - Growth orientation and type of internal structures are both observed to change abruptly as a function of growth temperature in catalyst free growth of gallium nitride nanowires. In the present work, corresponding temperature-dependent changes in the growth matrix substrate that can affect the availability of nucleation sites and influence the reactivity of constituent adatom materials in catalyst-free nanowire growth are investigated. The influence of Ga vapor pressure and an abrupt change in the availability of single versus molecular adatom constituents is identified as a possible controlling parameter.

UR - http://www.scopus.com/inward/record.url?scp=77957787234&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77957787234&partnerID=8YFLogxK

M3 - Conference contribution

SN - 9781617387609

VL - 1206

SP - 71

EP - 76

BT - Materials Research Society Symposium Proceedings

ER -