Catalyst-free GaN nanowire nucleation: Correlation of temperature-dependent nanowire orientation and growth matrix changes

Kaylee McElroy, Virginia M. Ayres, Thomas R. Bieler, Benjamin W. Jacobs, Martin A. Crimp

    Research output: ResearchConference contribution

    Abstract

    Growth orientation and type of internal structures are both observed to change abruptly as a function of growth temperature in catalyst free growth of gallium nitride nanowires. In the present work, corresponding temperature-dependent changes in the growth matrix substrate that can affect the availability of nucleation sites and influence the reactivity of constituent adatom materials in catalyst-free nanowire growth are investigated. The influence of Ga vapor pressure and an abrupt change in the availability of single versus molecular adatom constituents is identified as a possible controlling parameter.

    LanguageEnglish (US)
    Title of host publicationMaterials Research Society Symposium Proceedings
    Pages71-76
    Number of pages6
    Volume1206
    StatePublished - 2010
    Event2009 MRS Fall Meeting - Boston, MA, United States
    Duration: Nov 30 2009Dec 4 2009

    Other

    Other2009 MRS Fall Meeting
    CountryUnited States
    CityBoston, MA
    Period11/30/0912/4/09

    Profile

    nanowires
    nucleation
    catalysts
    matrices
    temperature
    Nanowires
    Nucleation
    Catalysts
    Temperature
    Adatoms
    Availability
    adatoms
    availability
    Growth temperature
    Vapor pressure
    Substrates
    gallium nitride
    Gallium nitride
    gallium nitrides
    vapor pressure

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanical Engineering
    • Mechanics of Materials

    Cite this

    Catalyst-free GaN nanowire nucleation : Correlation of temperature-dependent nanowire orientation and growth matrix changes. / McElroy, Kaylee; Ayres, Virginia M.; Bieler, Thomas R.; Jacobs, Benjamin W.; Crimp, Martin A.

    Materials Research Society Symposium Proceedings. Vol. 1206 2010. p. 71-76.

    Research output: ResearchConference contribution

    McElroy, K, Ayres, VM, Bieler, TR, Jacobs, BW & Crimp, MA 2010, Catalyst-free GaN nanowire nucleation: Correlation of temperature-dependent nanowire orientation and growth matrix changes. in Materials Research Society Symposium Proceedings. vol. 1206, pp. 71-76, 2009 MRS Fall Meeting, Boston, MA, United States, 11/30/09.
    McElroy K, Ayres VM, Bieler TR, Jacobs BW, Crimp MA. Catalyst-free GaN nanowire nucleation: Correlation of temperature-dependent nanowire orientation and growth matrix changes. In Materials Research Society Symposium Proceedings. Vol. 1206. 2010. p. 71-76.
    @inbook{7c1a2378c9e84f0793cf730c406fd26e,
    title = "Catalyst-free GaN nanowire nucleation: Correlation of temperature-dependent nanowire orientation and growth matrix changes",
    abstract = "Growth orientation and type of internal structures are both observed to change abruptly as a function of growth temperature in catalyst free growth of gallium nitride nanowires. In the present work, corresponding temperature-dependent changes in the growth matrix substrate that can affect the availability of nucleation sites and influence the reactivity of constituent adatom materials in catalyst-free nanowire growth are investigated. The influence of Ga vapor pressure and an abrupt change in the availability of single versus molecular adatom constituents is identified as a possible controlling parameter.",
    author = "Kaylee McElroy and Ayres, {Virginia M.} and Bieler, {Thomas R.} and Jacobs, {Benjamin W.} and Crimp, {Martin A.}",
    year = "2010",
    isbn = "9781617387609",
    volume = "1206",
    pages = "71--76",
    booktitle = "Materials Research Society Symposium Proceedings",

    }

    TY - CHAP

    T1 - Catalyst-free GaN nanowire nucleation

    T2 - Correlation of temperature-dependent nanowire orientation and growth matrix changes

    AU - McElroy,Kaylee

    AU - Ayres,Virginia M.

    AU - Bieler,Thomas R.

    AU - Jacobs,Benjamin W.

    AU - Crimp,Martin A.

    PY - 2010

    Y1 - 2010

    N2 - Growth orientation and type of internal structures are both observed to change abruptly as a function of growth temperature in catalyst free growth of gallium nitride nanowires. In the present work, corresponding temperature-dependent changes in the growth matrix substrate that can affect the availability of nucleation sites and influence the reactivity of constituent adatom materials in catalyst-free nanowire growth are investigated. The influence of Ga vapor pressure and an abrupt change in the availability of single versus molecular adatom constituents is identified as a possible controlling parameter.

    AB - Growth orientation and type of internal structures are both observed to change abruptly as a function of growth temperature in catalyst free growth of gallium nitride nanowires. In the present work, corresponding temperature-dependent changes in the growth matrix substrate that can affect the availability of nucleation sites and influence the reactivity of constituent adatom materials in catalyst-free nanowire growth are investigated. The influence of Ga vapor pressure and an abrupt change in the availability of single versus molecular adatom constituents is identified as a possible controlling parameter.

    UR - http://www.scopus.com/inward/record.url?scp=77957787234&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=77957787234&partnerID=8YFLogxK

    M3 - Conference contribution

    SN - 9781617387609

    VL - 1206

    SP - 71

    EP - 76

    BT - Materials Research Society Symposium Proceedings

    ER -