Effects of Sn Substitution on Thermoelectric Properties of Ge4SbTe5

Jared B. Williams, Spencer Mather, Donald T. Morelli

    Research output: Research - peer-reviewArticle

    Abstract

    Phase-change materials are identified by their ability to rapidly alternate between amorphous and crystalline phases upon heating, exhibiting large contrast in the optical/electrical properties of the respective phases. Such materials are primarily used in memory storage applications, but recently they have also been identified as potential thermoelectric materials. Many of the phase-change materials studied today can be found on the pseudobinary (GeTe)1−x(Sb2Te3)x tie-line. Ge4SbTe5, a single-phase compound just off of the (GeTe)1−x(Sb2Te3)x tie-line, forms in a metastable rocksalt crystal structure at room temperature. It has been found that stoichiometric and undoped Ge4SbTe5 exhibits thermal conductivity of ~1.2 W/m-K at high temperature and a dramatic decrease in electrical resistivity at 623 K due to a structural phase transition, which leads to a large enhancement in both thermoelectric power factor and thermoelectric figure of merit at 823 K. Introducing point defects via isoelectronic substitutions can be an effective means of reducing thermal conductivity and enhancing thermoelectric performance. We present a study of the effects of Sn substitution for Ge on the electrical and thermal transport properties of Ge4SbTe5.

    LanguageEnglish (US)
    Pages1077-1084
    Number of pages8
    JournalJournal of Electronic Materials
    Volume45
    Issue number2
    DOIs
    StatePublished - Feb 1 2016

    Profile

    Phase change materials
    Thermal conductivity
    Substitution reactions
    Temperature
    phase change materials
    thermal conductivity
    substitutes
    Thermoelectric power
    Point defects
    Transport properties
    Electric properties
    Crystal structure
    Phase transitions
    Crystalline materials
    Heating
    Data storage equipment
    Hot Temperature
    thermoelectric materials
    figure of merit
    point defects

    Keywords

    • phase transition
    • phase-change materials
    • thermal conductivity
    • Thermoelectric

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Materials Chemistry

    Cite this

    Effects of Sn Substitution on Thermoelectric Properties of Ge4SbTe5 . / Williams, Jared B.; Mather, Spencer; Morelli, Donald T.

    In: Journal of Electronic Materials, Vol. 45, No. 2, 01.02.2016, p. 1077-1084.

    Research output: Research - peer-reviewArticle

    Williams, Jared B. ; Mather, Spencer ; Morelli, Donald T./ Effects of Sn Substitution on Thermoelectric Properties of Ge4SbTe5 In: Journal of Electronic Materials. 2016 ; Vol. 45, No. 2. pp. 1077-1084
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