Effects of Sn Substitution on Thermoelectric Properties of Ge4SbTe5

Jared B. Williams, Spencer Mather, Donald T. Morelli

Research output: Contribution to journalArticle

Abstract

Phase-change materials are identified by their ability to rapidly alternate between amorphous and crystalline phases upon heating, exhibiting large contrast in the optical/electrical properties of the respective phases. Such materials are primarily used in memory storage applications, but recently they have also been identified as potential thermoelectric materials. Many of the phase-change materials studied today can be found on the pseudobinary (GeTe)1−x(Sb2Te3)x tie-line. Ge4SbTe5, a single-phase compound just off of the (GeTe)1−x(Sb2Te3)x tie-line, forms in a metastable rocksalt crystal structure at room temperature. It has been found that stoichiometric and undoped Ge4SbTe5 exhibits thermal conductivity of ~1.2 W/m-K at high temperature and a dramatic decrease in electrical resistivity at 623 K due to a structural phase transition, which leads to a large enhancement in both thermoelectric power factor and thermoelectric figure of merit at 823 K. Introducing point defects via isoelectronic substitutions can be an effective means of reducing thermal conductivity and enhancing thermoelectric performance. We present a study of the effects of Sn substitution for Ge on the electrical and thermal transport properties of Ge4SbTe5.

LanguageEnglish (US)
Pages1077-1084
Number of pages8
JournalJournal of Electronic Materials
Volume45
Issue number2
DOIs
StatePublished - Feb 1 2016

Profile

phase change materials
Phase change materials
Thermal conductivity
Substitution reactions
thermal conductivity
substitutes
thermoelectric materials
Thermoelectric power
Point defects
figure of merit
Transport properties
point defects
Electric properties
Crystal structure
transport properties
Phase transitions
electrical properties
Crystalline materials
Heating
Data storage equipment

Keywords

  • phase transition
  • phase-change materials
  • thermal conductivity
  • Thermoelectric

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Effects of Sn Substitution on Thermoelectric Properties of Ge4SbTe5 . / Williams, Jared B.; Mather, Spencer; Morelli, Donald T.

In: Journal of Electronic Materials, Vol. 45, No. 2, 01.02.2016, p. 1077-1084.

Research output: Contribution to journalArticle

Williams, Jared B. ; Mather, Spencer ; Morelli, Donald T./ Effects of Sn Substitution on Thermoelectric Properties of Ge4SbTe5 In: Journal of Electronic Materials. 2016 ; Vol. 45, No. 2. pp. 1077-1084
@article{4ff3c14133ae43c0b67729d40303f81e,
title = "Effects of Sn Substitution on Thermoelectric Properties of Ge4SbTe5",
abstract = "Phase-change materials are identified by their ability to rapidly alternate between amorphous and crystalline phases upon heating, exhibiting large contrast in the optical/electrical properties of the respective phases. Such materials are primarily used in memory storage applications, but recently they have also been identified as potential thermoelectric materials. Many of the phase-change materials studied today can be found on the pseudobinary (GeTe)1−x(Sb2Te3)x tie-line. Ge4SbTe5, a single-phase compound just off of the (GeTe)1−x(Sb2Te3)x tie-line, forms in a metastable rocksalt crystal structure at room temperature. It has been found that stoichiometric and undoped Ge4SbTe5 exhibits thermal conductivity of ~1.2 W/m-K at high temperature and a dramatic decrease in electrical resistivity at 623 K due to a structural phase transition, which leads to a large enhancement in both thermoelectric power factor and thermoelectric figure of merit at 823 K. Introducing point defects via isoelectronic substitutions can be an effective means of reducing thermal conductivity and enhancing thermoelectric performance. We present a study of the effects of Sn substitution for Ge on the electrical and thermal transport properties of Ge4SbTe5.",
keywords = "phase transition, phase-change materials, thermal conductivity, Thermoelectric",
author = "Williams, {Jared B.} and Spencer Mather and Morelli, {Donald T.}",
year = "2016",
month = "2",
day = "1",
doi = "10.1007/s11664-015-4221-7",
language = "English (US)",
volume = "45",
pages = "1077--1084",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "2",

}

TY - JOUR

T1 - Effects of Sn Substitution on Thermoelectric Properties of Ge4SbTe5

AU - Williams,Jared B.

AU - Mather,Spencer

AU - Morelli,Donald T.

PY - 2016/2/1

Y1 - 2016/2/1

N2 - Phase-change materials are identified by their ability to rapidly alternate between amorphous and crystalline phases upon heating, exhibiting large contrast in the optical/electrical properties of the respective phases. Such materials are primarily used in memory storage applications, but recently they have also been identified as potential thermoelectric materials. Many of the phase-change materials studied today can be found on the pseudobinary (GeTe)1−x(Sb2Te3)x tie-line. Ge4SbTe5, a single-phase compound just off of the (GeTe)1−x(Sb2Te3)x tie-line, forms in a metastable rocksalt crystal structure at room temperature. It has been found that stoichiometric and undoped Ge4SbTe5 exhibits thermal conductivity of ~1.2 W/m-K at high temperature and a dramatic decrease in electrical resistivity at 623 K due to a structural phase transition, which leads to a large enhancement in both thermoelectric power factor and thermoelectric figure of merit at 823 K. Introducing point defects via isoelectronic substitutions can be an effective means of reducing thermal conductivity and enhancing thermoelectric performance. We present a study of the effects of Sn substitution for Ge on the electrical and thermal transport properties of Ge4SbTe5.

AB - Phase-change materials are identified by their ability to rapidly alternate between amorphous and crystalline phases upon heating, exhibiting large contrast in the optical/electrical properties of the respective phases. Such materials are primarily used in memory storage applications, but recently they have also been identified as potential thermoelectric materials. Many of the phase-change materials studied today can be found on the pseudobinary (GeTe)1−x(Sb2Te3)x tie-line. Ge4SbTe5, a single-phase compound just off of the (GeTe)1−x(Sb2Te3)x tie-line, forms in a metastable rocksalt crystal structure at room temperature. It has been found that stoichiometric and undoped Ge4SbTe5 exhibits thermal conductivity of ~1.2 W/m-K at high temperature and a dramatic decrease in electrical resistivity at 623 K due to a structural phase transition, which leads to a large enhancement in both thermoelectric power factor and thermoelectric figure of merit at 823 K. Introducing point defects via isoelectronic substitutions can be an effective means of reducing thermal conductivity and enhancing thermoelectric performance. We present a study of the effects of Sn substitution for Ge on the electrical and thermal transport properties of Ge4SbTe5.

KW - phase transition

KW - phase-change materials

KW - thermal conductivity

KW - Thermoelectric

UR - http://www.scopus.com/inward/record.url?scp=84953365541&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84953365541&partnerID=8YFLogxK

U2 - 10.1007/s11664-015-4221-7

DO - 10.1007/s11664-015-4221-7

M3 - Article

VL - 45

SP - 1077

EP - 1084

JO - Journal of Electronic Materials

T2 - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 2

ER -