Electromigration in Sn-Bi modified with polyhedral oligomeric silsesquioxane

Ruihong Zhang, Guangchen Xu, Xitao Wang, Fu Guo, Andre Lee, K. N. Subramanian

    Research output: Research - peer-reviewArticle

    • 26 Citations

    Abstract

    Electromigration (EM) behavior of eutectic Sn-Bi modified with cage-type polyhedral oligomeric silsesquioxane (POSS) trisilanol was investigated. A direct current (DC) was applied to solder joints newly designed for uniform current distribution throughout the joint. For this study, a current density of 10 4 A/cm 2 was applied at 25°C and 50°C. The evolution of surface and interior microstructure due to current stressing was observed periodically using optical and scanning electron microscopy. The results revealed that the EM behavior was retarded significantly in solder joints with the addition of POSS trisilanol. Different from eutectic Sn-Bi solder joints, no continuous hillocks formed at the anode side and no cracks occurred at the cathode side in solder joints modified with POSS trisilanol even after 336 h of current stressing at 25°C. In addition, the accumulation of Bi/Sn phases at regions near the anode/cathode was also effectively limited. Joints stressed at 50°C also exhibited similar behavior. It is postulated that POSS trisilanol near the phase boundary provided significant restriction to the mass transport due to DC current stressing.

    LanguageEnglish (US)
    Pages2513-2521
    Number of pages9
    JournalJournal of Electronic Materials
    Volume39
    Issue number12
    DOIs
    StatePublished - Dec 2010

    Profile

    electromigration
    solders
    Electromigration
    Soldering alloys
    eutectics
    anodes
    cathodes
    direct current
    Eutectics
    Anodes
    Cathodes
    current distribution
    constrictions
    cracks
    current density
    microstructure
    scanning electron microscopy
    Phase boundaries
    Current density
    Mass transfer

    Keywords

    • Electromigration
    • microstructure
    • one-dimensional solder joints
    • POSS

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Materials Chemistry

    Cite this

    Zhang, R., Xu, G., Wang, X., Guo, F., Lee, A., & Subramanian, K. N. (2010). Electromigration in Sn-Bi modified with polyhedral oligomeric silsesquioxane. Journal of Electronic Materials, 39(12), 2513-2521. DOI: 10.1007/s11664-010-1377-z

    Electromigration in Sn-Bi modified with polyhedral oligomeric silsesquioxane. / Zhang, Ruihong; Xu, Guangchen; Wang, Xitao; Guo, Fu; Lee, Andre; Subramanian, K. N.

    In: Journal of Electronic Materials, Vol. 39, No. 12, 12.2010, p. 2513-2521.

    Research output: Research - peer-reviewArticle

    Zhang, R, Xu, G, Wang, X, Guo, F, Lee, A & Subramanian, KN 2010, 'Electromigration in Sn-Bi modified with polyhedral oligomeric silsesquioxane' Journal of Electronic Materials, vol 39, no. 12, pp. 2513-2521. DOI: 10.1007/s11664-010-1377-z
    Zhang R, Xu G, Wang X, Guo F, Lee A, Subramanian KN. Electromigration in Sn-Bi modified with polyhedral oligomeric silsesquioxane. Journal of Electronic Materials. 2010 Dec;39(12):2513-2521. Available from, DOI: 10.1007/s11664-010-1377-z
    Zhang, Ruihong ; Xu, Guangchen ; Wang, Xitao ; Guo, Fu ; Lee, Andre ; Subramanian, K. N./ Electromigration in Sn-Bi modified with polyhedral oligomeric silsesquioxane. In: Journal of Electronic Materials. 2010 ; Vol. 39, No. 12. pp. 2513-2521
    @article{2966f277efce47f484089207d6ed29d9,
    title = "Electromigration in Sn-Bi modified with polyhedral oligomeric silsesquioxane",
    abstract = "Electromigration (EM) behavior of eutectic Sn-Bi modified with cage-type polyhedral oligomeric silsesquioxane (POSS) trisilanol was investigated. A direct current (DC) was applied to solder joints newly designed for uniform current distribution throughout the joint. For this study, a current density of 10 4 A/cm 2 was applied at 25°C and 50°C. The evolution of surface and interior microstructure due to current stressing was observed periodically using optical and scanning electron microscopy. The results revealed that the EM behavior was retarded significantly in solder joints with the addition of POSS trisilanol. Different from eutectic Sn-Bi solder joints, no continuous hillocks formed at the anode side and no cracks occurred at the cathode side in solder joints modified with POSS trisilanol even after 336 h of current stressing at 25°C. In addition, the accumulation of Bi/Sn phases at regions near the anode/cathode was also effectively limited. Joints stressed at 50°C also exhibited similar behavior. It is postulated that POSS trisilanol near the phase boundary provided significant restriction to the mass transport due to DC current stressing.",
    keywords = "Electromigration, microstructure, one-dimensional solder joints, POSS",
    author = "Ruihong Zhang and Guangchen Xu and Xitao Wang and Fu Guo and Andre Lee and Subramanian, {K. N.}",
    year = "2010",
    month = "12",
    doi = "10.1007/s11664-010-1377-z",
    volume = "39",
    pages = "2513--2521",
    journal = "Journal of Electronic Materials",
    issn = "0361-5235",
    publisher = "Springer New York",
    number = "12",

    }

    TY - JOUR

    T1 - Electromigration in Sn-Bi modified with polyhedral oligomeric silsesquioxane

    AU - Zhang,Ruihong

    AU - Xu,Guangchen

    AU - Wang,Xitao

    AU - Guo,Fu

    AU - Lee,Andre

    AU - Subramanian,K. N.

    PY - 2010/12

    Y1 - 2010/12

    N2 - Electromigration (EM) behavior of eutectic Sn-Bi modified with cage-type polyhedral oligomeric silsesquioxane (POSS) trisilanol was investigated. A direct current (DC) was applied to solder joints newly designed for uniform current distribution throughout the joint. For this study, a current density of 10 4 A/cm 2 was applied at 25°C and 50°C. The evolution of surface and interior microstructure due to current stressing was observed periodically using optical and scanning electron microscopy. The results revealed that the EM behavior was retarded significantly in solder joints with the addition of POSS trisilanol. Different from eutectic Sn-Bi solder joints, no continuous hillocks formed at the anode side and no cracks occurred at the cathode side in solder joints modified with POSS trisilanol even after 336 h of current stressing at 25°C. In addition, the accumulation of Bi/Sn phases at regions near the anode/cathode was also effectively limited. Joints stressed at 50°C also exhibited similar behavior. It is postulated that POSS trisilanol near the phase boundary provided significant restriction to the mass transport due to DC current stressing.

    AB - Electromigration (EM) behavior of eutectic Sn-Bi modified with cage-type polyhedral oligomeric silsesquioxane (POSS) trisilanol was investigated. A direct current (DC) was applied to solder joints newly designed for uniform current distribution throughout the joint. For this study, a current density of 10 4 A/cm 2 was applied at 25°C and 50°C. The evolution of surface and interior microstructure due to current stressing was observed periodically using optical and scanning electron microscopy. The results revealed that the EM behavior was retarded significantly in solder joints with the addition of POSS trisilanol. Different from eutectic Sn-Bi solder joints, no continuous hillocks formed at the anode side and no cracks occurred at the cathode side in solder joints modified with POSS trisilanol even after 336 h of current stressing at 25°C. In addition, the accumulation of Bi/Sn phases at regions near the anode/cathode was also effectively limited. Joints stressed at 50°C also exhibited similar behavior. It is postulated that POSS trisilanol near the phase boundary provided significant restriction to the mass transport due to DC current stressing.

    KW - Electromigration

    KW - microstructure

    KW - one-dimensional solder joints

    KW - POSS

    UR - http://www.scopus.com/inward/record.url?scp=78049513142&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=78049513142&partnerID=8YFLogxK

    U2 - 10.1007/s11664-010-1377-z

    DO - 10.1007/s11664-010-1377-z

    M3 - Article

    VL - 39

    SP - 2513

    EP - 2521

    JO - Journal of Electronic Materials

    T2 - Journal of Electronic Materials

    JF - Journal of Electronic Materials

    SN - 0361-5235

    IS - 12

    ER -