Electromigration in Sn-Bi modified with polyhedral oligomeric silsesquioxane

Ruihong Zhang, Guangchen Xu, Xitao Wang, Fu Guo, Andre Lee, K. N. Subramanian

Research output: Contribution to journalArticle

  • 30 Citations

Abstract

Electromigration (EM) behavior of eutectic Sn-Bi modified with cage-type polyhedral oligomeric silsesquioxane (POSS) trisilanol was investigated. A direct current (DC) was applied to solder joints newly designed for uniform current distribution throughout the joint. For this study, a current density of 10 4 A/cm 2 was applied at 25°C and 50°C. The evolution of surface and interior microstructure due to current stressing was observed periodically using optical and scanning electron microscopy. The results revealed that the EM behavior was retarded significantly in solder joints with the addition of POSS trisilanol. Different from eutectic Sn-Bi solder joints, no continuous hillocks formed at the anode side and no cracks occurred at the cathode side in solder joints modified with POSS trisilanol even after 336 h of current stressing at 25°C. In addition, the accumulation of Bi/Sn phases at regions near the anode/cathode was also effectively limited. Joints stressed at 50°C also exhibited similar behavior. It is postulated that POSS trisilanol near the phase boundary provided significant restriction to the mass transport due to DC current stressing.

LanguageEnglish (US)
Pages2513-2521
Number of pages9
JournalJournal of Electronic Materials
Volume39
Issue number12
DOIs
StatePublished - Dec 2010

Profile

Electromigration
electromigration
solders
Soldering alloys
eutectics
Eutectics
Anodes
Cathodes
anodes
cathodes
direct current
Phase boundaries
current distribution
constrictions
Current density
Mass transfer
cracks
current density
Cracks
microstructure

Keywords

  • Electromigration
  • microstructure
  • one-dimensional solder joints
  • POSS

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Zhang, R., Xu, G., Wang, X., Guo, F., Lee, A., & Subramanian, K. N. (2010). Electromigration in Sn-Bi modified with polyhedral oligomeric silsesquioxane. Journal of Electronic Materials, 39(12), 2513-2521. DOI: 10.1007/s11664-010-1377-z

Electromigration in Sn-Bi modified with polyhedral oligomeric silsesquioxane. / Zhang, Ruihong; Xu, Guangchen; Wang, Xitao; Guo, Fu; Lee, Andre; Subramanian, K. N.

In: Journal of Electronic Materials, Vol. 39, No. 12, 12.2010, p. 2513-2521.

Research output: Contribution to journalArticle

Zhang, R, Xu, G, Wang, X, Guo, F, Lee, A & Subramanian, KN 2010, 'Electromigration in Sn-Bi modified with polyhedral oligomeric silsesquioxane' Journal of Electronic Materials, vol 39, no. 12, pp. 2513-2521. DOI: 10.1007/s11664-010-1377-z
Zhang R, Xu G, Wang X, Guo F, Lee A, Subramanian KN. Electromigration in Sn-Bi modified with polyhedral oligomeric silsesquioxane. Journal of Electronic Materials. 2010 Dec;39(12):2513-2521. Available from, DOI: 10.1007/s11664-010-1377-z
Zhang, Ruihong ; Xu, Guangchen ; Wang, Xitao ; Guo, Fu ; Lee, Andre ; Subramanian, K. N./ Electromigration in Sn-Bi modified with polyhedral oligomeric silsesquioxane. In: Journal of Electronic Materials. 2010 ; Vol. 39, No. 12. pp. 2513-2521
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