Engineering Temperature-Dependent Carrier Concentration in Bulk Composite Materials via Temperature-Dependent Fermi Level Offset

Si Hui, Wenpei Gao, Xu Lu, Anurag Panda, Trevor P. Bailey, Alexander A. Page, Stephen R. Forrest, Donald T. Morelli, Xiaoqing Pan, Kevin P. Pipe, Ctirad Uher

Research output: Contribution to journalArticle

Abstract

Precise control of carrier concentration in both bulk and thin-film materials is crucial for many solid-state devices, including photovoltaic cells, superconductors, and high mobility transistors. For applications that span a wide temperature range (thermoelectric power generation being a prime example) the optimal carrier concentration varies as a function of temperature. This work presents a modified modulation doping method to engineer the temperature dependence of the carrier concentration by incorporating a nanosize secondary phase that controls the temperature-dependent doping in the bulk matrix. This study demonstrates this technique by de-doping the heavily defect-doped degenerate semiconductor GeTe, thereby enhancing its average power factor by 100% at low temperatures, with no deterioration at high temperatures. This can be a general method to improve the average thermoelectric performance of many other materials.

Original languageEnglish (US)
JournalAdvanced Energy Materials
DOIs
StateAccepted/In press - 2017

Profile

Acetanilides
Temperature
Carrier concentration
Traffic Accidents
Enzyme Reactivators
Paroxysmal Dyspnea
Methyl Chloride
Elevators and Escalators
Adrenergic beta-Agonists
Implanted Electrodes
Glyceraldehyde-3-Phosphate Dehydrogenases
Blood Flow Velocity
Endodontics
Fermi level
Superconducting materials
Transistors
Modulation
Engineers
Thin films
Defects

Keywords

  • Composite materials
  • Modulation doping
  • Thermoelectric materials

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)

Cite this

Engineering Temperature-Dependent Carrier Concentration in Bulk Composite Materials via Temperature-Dependent Fermi Level Offset. / Hui, Si; Gao, Wenpei; Lu, Xu; Panda, Anurag; Bailey, Trevor P.; Page, Alexander A.; Forrest, Stephen R.; Morelli, Donald T.; Pan, Xiaoqing; Pipe, Kevin P.; Uher, Ctirad.

In: Advanced Energy Materials, 2017.

Research output: Contribution to journalArticle

Hui, Si; Gao, Wenpei; Lu, Xu; Panda, Anurag; Bailey, Trevor P.; Page, Alexander A.; Forrest, Stephen R.; Morelli, Donald T.; Pan, Xiaoqing; Pipe, Kevin P.; Uher, Ctirad / Engineering Temperature-Dependent Carrier Concentration in Bulk Composite Materials via Temperature-Dependent Fermi Level Offset.

In: Advanced Energy Materials, 2017.

Research output: Contribution to journalArticle

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