Exciton diffusion lengths of organic semiconductor thin films measured by spectrally resolved photoluminescence quenching

Richard R. Lunt, Noel C. Giebink, Anna A. Belak, Jay B. Benziger, Stephen R. Forrest

Research output: Research - peer-reviewArticle

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Abstract

We demonstrate spectrally resolved photoluminescence quenching as a means to determine the exciton diffusion length of several archetype organic semiconductors used in thin film devices. We show that aggregation and crystal orientation influence the anisotropy of the diffusion length for vacuum-deposited polycrystalline films. The measurement of the singlet diffusion lengths is found to be in agreement with diffusion by Förster transfer, whereas triplet diffusion occurs primarily via Dexter transfer.

LanguageEnglish (US)
Article number053711
JournalJournal of Applied Physics
Volume105
Issue number5
DOIs
StatePublished - 2009
Externally publishedYes

Profile

organic semiconductors
diffusion length
quenching
excitons
photoluminescence
thin films
vacuum
anisotropy
crystals

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Exciton diffusion lengths of organic semiconductor thin films measured by spectrally resolved photoluminescence quenching. / Lunt, Richard R.; Giebink, Noel C.; Belak, Anna A.; Benziger, Jay B.; Forrest, Stephen R.

In: Journal of Applied Physics, Vol. 105, No. 5, 053711, 2009.

Research output: Research - peer-reviewArticle

Lunt, Richard R. ; Giebink, Noel C. ; Belak, Anna A. ; Benziger, Jay B. ; Forrest, Stephen R./ Exciton diffusion lengths of organic semiconductor thin films measured by spectrally resolved photoluminescence quenching. In: Journal of Applied Physics. 2009 ; Vol. 105, No. 5.
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