Growth mechanism and elemental distribution of β-Ga 2O 3 crystalline nanowires synthesized by cobalt-assisted chemical vapor deposition

Hui Wang, Yucheng Lan, Jiaming Zhang, Martin A. Crimp, Zhifeng Ren

Research output: Contribution to journalArticle

  • 5 Citations

Abstract

Long β-Ga 2O 3 crystalline nanowires are synthesized on patterned silicon substrates using chemical vapor deposition technique. Advanced electron microscopy indicates that the as-grown β-Ga 2O 3nanowires are consisted of poly-crystalline (Co, Ga)O tips and straight crystalline β-Ga 2O 3 stems. The catalytic cobalt not only locates at the nanowire tips but diffuses into β-Ga 2O 3 nanowire stems several ten nanometers. A solid diffusion gro wth mechanism is proposed based on the spatial elemental distribution along the β-Ga 2O 3 nanowires at nanoscale.

LanguageEnglish (US)
Pages3101-3107
Number of pages7
JournalJournal of Nanoscience and Nanotechnology
Volume12
Issue number4
DOIs
StatePublished - 2012

Profile

Cobalt
Nanowires
Chemical vapor deposition
nanowires
cobalt
vapor deposition
Crystalline materials
stems
Diffusion in solids
Silicon
Electron microscopy
electron microscopy
spatial distribution
silicon
Substrates

Keywords

  • Chemical vapor deposition
  • Elemental distribution
  • Ga O
  • Growth mechanism
  • Microstructure
  • Nanowire

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this

Growth mechanism and elemental distribution of β-Ga 2O 3 crystalline nanowires synthesized by cobalt-assisted chemical vapor deposition. / Wang, Hui; Lan, Yucheng; Zhang, Jiaming; Crimp, Martin A.; Ren, Zhifeng.

In: Journal of Nanoscience and Nanotechnology, Vol. 12, No. 4, 2012, p. 3101-3107.

Research output: Contribution to journalArticle

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AU - Lan,Yucheng

AU - Zhang,Jiaming

AU - Crimp,Martin A.

AU - Ren,Zhifeng

PY - 2012

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AB - Long β-Ga 2O 3 crystalline nanowires are synthesized on patterned silicon substrates using chemical vapor deposition technique. Advanced electron microscopy indicates that the as-grown β-Ga 2O 3nanowires are consisted of poly-crystalline (Co, Ga)O tips and straight crystalline β-Ga 2O 3 stems. The catalytic cobalt not only locates at the nanowire tips but diffuses into β-Ga 2O 3 nanowire stems several ten nanometers. A solid diffusion gro wth mechanism is proposed based on the spatial elemental distribution along the β-Ga 2O 3 nanowires at nanoscale.

KW - Chemical vapor deposition

KW - Elemental distribution

KW - Ga O

KW - Growth mechanism

KW - Microstructure

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