Growth mechanism and elemental distribution of β-Ga 2O 3 crystalline nanowires synthesized by cobalt-assisted chemical vapor deposition

Hui Wang, Yucheng Lan, Jiaming Zhang, Martin A. Crimp, Zhifeng Ren

    Research output: Contribution to journalArticle

    • 5 Citations

    Abstract

    Long β-Ga 2O 3 crystalline nanowires are synthesized on patterned silicon substrates using chemical vapor deposition technique. Advanced electron microscopy indicates that the as-grown β-Ga 2O 3nanowires are consisted of poly-crystalline (Co, Ga)O tips and straight crystalline β-Ga 2O 3 stems. The catalytic cobalt not only locates at the nanowire tips but diffuses into β-Ga 2O 3 nanowire stems several ten nanometers. A solid diffusion gro wth mechanism is proposed based on the spatial elemental distribution along the β-Ga 2O 3 nanowires at nanoscale.

    Original languageEnglish (US)
    Pages (from-to)3101-3107
    Number of pages7
    JournalJournal of Nanoscience and Nanotechnology
    Volume12
    Issue number4
    DOIs
    StatePublished - 2012

    Profile

    Nanowires
    nanowires
    Crystalline materials
    Ergothioneine
    Chemical vapor deposition
    Cobalt
    stems
    cobalt
    vapor deposition
    Diffusion in solids
    Electron microscopy
    Silicon
    Substrates
    Erythrasma
    Fetishism (Psychiatric)
    electron microscopy
    spatial distribution
    silicon

    Keywords

    • Chemical vapor deposition
    • Elemental distribution
    • Ga O
    • Growth mechanism
    • Microstructure
    • Nanowire

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Chemistry(all)
    • Materials Science(all)
    • Bioengineering
    • Biomedical Engineering

    Cite this

    Growth mechanism and elemental distribution of β-Ga 2O 3 crystalline nanowires synthesized by cobalt-assisted chemical vapor deposition. / Wang, Hui; Lan, Yucheng; Zhang, Jiaming; Crimp, Martin A.; Ren, Zhifeng.

    In: Journal of Nanoscience and Nanotechnology, Vol. 12, No. 4, 2012, p. 3101-3107.

    Research output: Contribution to journalArticle

    Wang, Hui; Lan, Yucheng; Zhang, Jiaming; Crimp, Martin A.; Ren, Zhifeng / Growth mechanism and elemental distribution of β-Ga 2O 3 crystalline nanowires synthesized by cobalt-assisted chemical vapor deposition.

    In: Journal of Nanoscience and Nanotechnology, Vol. 12, No. 4, 2012, p. 3101-3107.

    Research output: Contribution to journalArticle

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    abstract = "Long β-Ga 2O 3 crystalline nanowires are synthesized on patterned silicon substrates using chemical vapor deposition technique. Advanced electron microscopy indicates that the as-grown β-Ga 2O 3nanowires are consisted of poly-crystalline (Co, Ga)O tips and straight crystalline β-Ga 2O 3 stems. The catalytic cobalt not only locates at the nanowire tips but diffuses into β-Ga 2O 3 nanowire stems several ten nanometers. A solid diffusion gro wth mechanism is proposed based on the spatial elemental distribution along the β-Ga 2O 3 nanowires at nanoscale.",
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    AU - Ren,Zhifeng

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    AB - Long β-Ga 2O 3 crystalline nanowires are synthesized on patterned silicon substrates using chemical vapor deposition technique. Advanced electron microscopy indicates that the as-grown β-Ga 2O 3nanowires are consisted of poly-crystalline (Co, Ga)O tips and straight crystalline β-Ga 2O 3 stems. The catalytic cobalt not only locates at the nanowire tips but diffuses into β-Ga 2O 3 nanowire stems several ten nanometers. A solid diffusion gro wth mechanism is proposed based on the spatial elemental distribution along the β-Ga 2O 3 nanowires at nanoscale.

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