Growth mechanism and elemental distribution of β-Ga 2O 3 crystalline nanowires synthesized by cobalt-assisted chemical vapor deposition

Hui Wang, Yucheng Lan, Jiaming Zhang, Martin A. Crimp, Zhifeng Ren

    Research output: Research - peer-reviewArticle

    • 5 Citations

    Abstract

    Long β-Ga 2O 3 crystalline nanowires are synthesized on patterned silicon substrates using chemical vapor deposition technique. Advanced electron microscopy indicates that the as-grown β-Ga 2O 3nanowires are consisted of poly-crystalline (Co, Ga)O tips and straight crystalline β-Ga 2O 3 stems. The catalytic cobalt not only locates at the nanowire tips but diffuses into β-Ga 2O 3 nanowire stems several ten nanometers. A solid diffusion gro wth mechanism is proposed based on the spatial elemental distribution along the β-Ga 2O 3 nanowires at nanoscale.

    LanguageEnglish (US)
    Pages3101-3107
    Number of pages7
    JournalJournal of Nanoscience and Nanotechnology
    Volume12
    Issue number4
    DOIs
    StatePublished - 2012

    Profile

    Cobalt
    Nanowires
    Chemical vapor deposition
    Crystalline materials
    nanowires
    cobalt
    vapor deposition
    stems
    Diffusion in solids
    Silicon
    Electron microscopy
    Substrates
    electron microscopy
    spatial distribution
    silicon

    Keywords

    • Chemical vapor deposition
    • Elemental distribution
    • Ga O
    • Growth mechanism
    • Microstructure
    • Nanowire

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Chemistry(all)
    • Materials Science(all)
    • Bioengineering
    • Biomedical Engineering

    Cite this

    Growth mechanism and elemental distribution of β-Ga 2O 3 crystalline nanowires synthesized by cobalt-assisted chemical vapor deposition. / Wang, Hui; Lan, Yucheng; Zhang, Jiaming; Crimp, Martin A.; Ren, Zhifeng.

    In: Journal of Nanoscience and Nanotechnology, Vol. 12, No. 4, 2012, p. 3101-3107.

    Research output: Research - peer-reviewArticle

    @article{97765088338c4c03bcc56f1a9a17e87c,
    title = "Growth mechanism and elemental distribution of β-Ga 2O 3 crystalline nanowires synthesized by cobalt-assisted chemical vapor deposition",
    abstract = "Long β-Ga 2O 3 crystalline nanowires are synthesized on patterned silicon substrates using chemical vapor deposition technique. Advanced electron microscopy indicates that the as-grown β-Ga 2O 3nanowires are consisted of poly-crystalline (Co, Ga)O tips and straight crystalline β-Ga 2O 3 stems. The catalytic cobalt not only locates at the nanowire tips but diffuses into β-Ga 2O 3 nanowire stems several ten nanometers. A solid diffusion gro wth mechanism is proposed based on the spatial elemental distribution along the β-Ga 2O 3 nanowires at nanoscale.",
    keywords = "Chemical vapor deposition, Elemental distribution, Ga O, Growth mechanism, Microstructure, Nanowire",
    author = "Hui Wang and Yucheng Lan and Jiaming Zhang and Crimp, {Martin A.} and Zhifeng Ren",
    year = "2012",
    doi = "10.1166/jnn.2012.5823",
    volume = "12",
    pages = "3101--3107",
    journal = "Journal of Nanoscience and Nanotechnology",
    issn = "1533-4880",
    publisher = "American Scientific Publishers",
    number = "4",

    }

    TY - JOUR

    T1 - Growth mechanism and elemental distribution of β-Ga 2O 3 crystalline nanowires synthesized by cobalt-assisted chemical vapor deposition

    AU - Wang,Hui

    AU - Lan,Yucheng

    AU - Zhang,Jiaming

    AU - Crimp,Martin A.

    AU - Ren,Zhifeng

    PY - 2012

    Y1 - 2012

    N2 - Long β-Ga 2O 3 crystalline nanowires are synthesized on patterned silicon substrates using chemical vapor deposition technique. Advanced electron microscopy indicates that the as-grown β-Ga 2O 3nanowires are consisted of poly-crystalline (Co, Ga)O tips and straight crystalline β-Ga 2O 3 stems. The catalytic cobalt not only locates at the nanowire tips but diffuses into β-Ga 2O 3 nanowire stems several ten nanometers. A solid diffusion gro wth mechanism is proposed based on the spatial elemental distribution along the β-Ga 2O 3 nanowires at nanoscale.

    AB - Long β-Ga 2O 3 crystalline nanowires are synthesized on patterned silicon substrates using chemical vapor deposition technique. Advanced electron microscopy indicates that the as-grown β-Ga 2O 3nanowires are consisted of poly-crystalline (Co, Ga)O tips and straight crystalline β-Ga 2O 3 stems. The catalytic cobalt not only locates at the nanowire tips but diffuses into β-Ga 2O 3 nanowire stems several ten nanometers. A solid diffusion gro wth mechanism is proposed based on the spatial elemental distribution along the β-Ga 2O 3 nanowires at nanoscale.

    KW - Chemical vapor deposition

    KW - Elemental distribution

    KW - Ga O

    KW - Growth mechanism

    KW - Microstructure

    KW - Nanowire

    UR - http://www.scopus.com/inward/record.url?scp=84863307636&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84863307636&partnerID=8YFLogxK

    U2 - 10.1166/jnn.2012.5823

    DO - 10.1166/jnn.2012.5823

    M3 - Article

    VL - 12

    SP - 3101

    EP - 3107

    JO - Journal of Nanoscience and Nanotechnology

    T2 - Journal of Nanoscience and Nanotechnology

    JF - Journal of Nanoscience and Nanotechnology

    SN - 1533-4880

    IS - 4

    ER -