Heavy phosphorus doping by epitaxial growth on the (111) diamond surface

T. A. Grotjohn, D. T. Tran, M. K. Yaran, S. N. Demlow, T. Schuelke

Research output: Contribution to journalArticle

  • 7 Citations

Abstract

Semiconducting n-type diamond can be fabricated using phosphorus as a substitutional donor dopant. The dopant activation energy level at 0.58 eV is deep. At high dopant concentrations of 1020 cm- 3 the activation energy reduces to less than 0.05 eV. Phosphorus doping at concentrations of 1020 cm- 3 or higher has been achieved with epitaxial growth on the (111) diamond crystallographic surface. In this work epitaxial growth of diamond with high phosphorus concentrations exceeding 1020 cm- 3 is performed using a microwave plasma-assisted chemical vapor deposition process with process conditions that include a pressure of 160 Torr. This pressure is higher than previous phosphorus doping reports of (111) surface diamond growth. The other growth conditions include a feedgas mixture of 0.25% methane and 500 ppm phosphine in hydrogen, and a substrate temperature of 950-1000 C. The measured growth rate was 1.25 μm/h. The room temperature resistivity of the heavily phosphorus doped diamond was 120-150 -cm and the activation energy was 0.027 eV.

Original languageEnglish (US)
Pages (from-to)129-133
Number of pages5
JournalDiamond and Related Materials
Volume44
DOIs
StatePublished - Apr 2014

Profile

Phosphorus
Diamonds
phosphorus
diamonds
Epitaxial growth
Activation energy
activation energy
Edema Disease of Swine
African Swine Fever
Biotin
Temperature
Acetanilides
Erythrasma
Biogenic Amines
Electron energy levels
Chemical vapor deposition
Methane
Microwaves
Plasmas
Hydrogen

Keywords

  • Diamond film
  • n-type doping
  • Plasma CVD

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Physics and Astronomy(all)
  • Chemistry(all)

Cite this

Heavy phosphorus doping by epitaxial growth on the (111) diamond surface. / Grotjohn, T. A.; Tran, D. T.; Yaran, M. K.; Demlow, S. N.; Schuelke, T.

In: Diamond and Related Materials, Vol. 44, 04.2014, p. 129-133.

Research output: Contribution to journalArticle

Grotjohn, T. A.; Tran, D. T.; Yaran, M. K.; Demlow, S. N.; Schuelke, T. / Heavy phosphorus doping by epitaxial growth on the (111) diamond surface.

In: Diamond and Related Materials, Vol. 44, 04.2014, p. 129-133.

Research output: Contribution to journalArticle

@article{f2860a18f606416493691e1a5c977759,
title = "Heavy phosphorus doping by epitaxial growth on the (111) diamond surface",
abstract = "Semiconducting n-type diamond can be fabricated using phosphorus as a substitutional donor dopant. The dopant activation energy level at 0.58 eV is deep. At high dopant concentrations of 1020 cm- 3 the activation energy reduces to less than 0.05 eV. Phosphorus doping at concentrations of 1020 cm- 3 or higher has been achieved with epitaxial growth on the (111) diamond crystallographic surface. In this work epitaxial growth of diamond with high phosphorus concentrations exceeding 1020 cm- 3 is performed using a microwave plasma-assisted chemical vapor deposition process with process conditions that include a pressure of 160 Torr. This pressure is higher than previous phosphorus doping reports of (111) surface diamond growth. The other growth conditions include a feedgas mixture of 0.25% methane and 500 ppm phosphine in hydrogen, and a substrate temperature of 950-1000 C. The measured growth rate was 1.25 μm/h. The room temperature resistivity of the heavily phosphorus doped diamond was 120-150 -cm and the activation energy was 0.027 eV.",
keywords = "Diamond film, n-type doping, Plasma CVD",
author = "Grotjohn, {T. A.} and Tran, {D. T.} and Yaran, {M. K.} and Demlow, {S. N.} and T. Schuelke",
year = "2014",
month = "4",
doi = "10.1016/j.diamond.2014.02.009",
volume = "44",
pages = "129--133",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier BV",

}

TY - JOUR

T1 - Heavy phosphorus doping by epitaxial growth on the (111) diamond surface

AU - Grotjohn,T. A.

AU - Tran,D. T.

AU - Yaran,M. K.

AU - Demlow,S. N.

AU - Schuelke,T.

PY - 2014/4

Y1 - 2014/4

N2 - Semiconducting n-type diamond can be fabricated using phosphorus as a substitutional donor dopant. The dopant activation energy level at 0.58 eV is deep. At high dopant concentrations of 1020 cm- 3 the activation energy reduces to less than 0.05 eV. Phosphorus doping at concentrations of 1020 cm- 3 or higher has been achieved with epitaxial growth on the (111) diamond crystallographic surface. In this work epitaxial growth of diamond with high phosphorus concentrations exceeding 1020 cm- 3 is performed using a microwave plasma-assisted chemical vapor deposition process with process conditions that include a pressure of 160 Torr. This pressure is higher than previous phosphorus doping reports of (111) surface diamond growth. The other growth conditions include a feedgas mixture of 0.25% methane and 500 ppm phosphine in hydrogen, and a substrate temperature of 950-1000 C. The measured growth rate was 1.25 μm/h. The room temperature resistivity of the heavily phosphorus doped diamond was 120-150 -cm and the activation energy was 0.027 eV.

AB - Semiconducting n-type diamond can be fabricated using phosphorus as a substitutional donor dopant. The dopant activation energy level at 0.58 eV is deep. At high dopant concentrations of 1020 cm- 3 the activation energy reduces to less than 0.05 eV. Phosphorus doping at concentrations of 1020 cm- 3 or higher has been achieved with epitaxial growth on the (111) diamond crystallographic surface. In this work epitaxial growth of diamond with high phosphorus concentrations exceeding 1020 cm- 3 is performed using a microwave plasma-assisted chemical vapor deposition process with process conditions that include a pressure of 160 Torr. This pressure is higher than previous phosphorus doping reports of (111) surface diamond growth. The other growth conditions include a feedgas mixture of 0.25% methane and 500 ppm phosphine in hydrogen, and a substrate temperature of 950-1000 C. The measured growth rate was 1.25 μm/h. The room temperature resistivity of the heavily phosphorus doped diamond was 120-150 -cm and the activation energy was 0.027 eV.

KW - Diamond film

KW - n-type doping

KW - Plasma CVD

UR - http://www.scopus.com/inward/record.url?scp=84897864151&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84897864151&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2014.02.009

DO - 10.1016/j.diamond.2014.02.009

M3 - Article

VL - 44

SP - 129

EP - 133

JO - Diamond and Related Materials

T2 - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

ER -