Homoepitaxial Growth of Metal Halide Crystals Investigated by Reflection High-Energy Electron Diffraction

Pei Chen, Padmanaban S. Kuttipillai, Lili Wang, Richard R. Lunt

    Research output: Research - peer-reviewArticle

    Abstract

    We report the homoepitaxial growth of a metal halide on single crystals investigated with in situ reflection high-energy electron diffraction (RHEED) and ex situ atomic force microscopy (AFM). Epitaxial growth of NaCl on NaCl (001) is explored as a function of temperature and growth rate which provides the first detailed report of RHEED oscillations for metal halide growth. Layer-by-layer growth is observed at room temperature accompanied by clear RHEED oscillations while the growth mode transitions to an island (3D) mode at low temperature. At higher temperatures (>100 °C), RHEED oscillations and AFM data indicate a transition to a step-flow growth mode. To show the importance of such metal halide growth, green organic light-emitting diodes (OLEDs) are demonstrated using a doped NaCl film with a phosphorescent emitter as the emissive layer. This study demonstrates the ability to perform in situ and non-destructive RHEED monitoring even on insulating substrates and could enable doped single crystals and crystalline substrates for a range of optoelectronic applications.

    LanguageEnglish (US)
    Article number40542
    JournalScientific Reports
    Volume7
    DOIs
    StatePublished - Jan 10 2017

    Profile

    metal halides
    high energy electrons
    electron diffraction
    crystals
    oscillations
    atomic force microscopy
    single crystals
    doped crystals
    emitters
    light emitting diodes
    room temperature
    temperature

    ASJC Scopus subject areas

    • General

    Cite this

    Homoepitaxial Growth of Metal Halide Crystals Investigated by Reflection High-Energy Electron Diffraction. / Chen, Pei; Kuttipillai, Padmanaban S.; Wang, Lili; Lunt, Richard R.

    In: Scientific Reports, Vol. 7, 40542, 10.01.2017.

    Research output: Research - peer-reviewArticle

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    AU - Wang,Lili

    AU - Lunt,Richard R.

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    AB - We report the homoepitaxial growth of a metal halide on single crystals investigated with in situ reflection high-energy electron diffraction (RHEED) and ex situ atomic force microscopy (AFM). Epitaxial growth of NaCl on NaCl (001) is explored as a function of temperature and growth rate which provides the first detailed report of RHEED oscillations for metal halide growth. Layer-by-layer growth is observed at room temperature accompanied by clear RHEED oscillations while the growth mode transitions to an island (3D) mode at low temperature. At higher temperatures (>100 °C), RHEED oscillations and AFM data indicate a transition to a step-flow growth mode. To show the importance of such metal halide growth, green organic light-emitting diodes (OLEDs) are demonstrated using a doped NaCl film with a phosphorescent emitter as the emissive layer. This study demonstrates the ability to perform in situ and non-destructive RHEED monitoring even on insulating substrates and could enable doped single crystals and crystalline substrates for a range of optoelectronic applications.

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