Homoepitaxial Growth of Metal Halide Crystals Investigated by Reflection High-Energy Electron Diffraction

Pei Chen, Padmanaban S. Kuttipillai, Lili Wang, Richard R. Lunt

Research output: Contribution to journalArticle

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Abstract

We report the homoepitaxial growth of a metal halide on single crystals investigated with in situ reflection high-energy electron diffraction (RHEED) and ex situ atomic force microscopy (AFM). Epitaxial growth of NaCl on NaCl (001) is explored as a function of temperature and growth rate which provides the first detailed report of RHEED oscillations for metal halide growth. Layer-by-layer growth is observed at room temperature accompanied by clear RHEED oscillations while the growth mode transitions to an island (3D) mode at low temperature. At higher temperatures (>100 °C), RHEED oscillations and AFM data indicate a transition to a step-flow growth mode. To show the importance of such metal halide growth, green organic light-emitting diodes (OLEDs) are demonstrated using a doped NaCl film with a phosphorescent emitter as the emissive layer. This study demonstrates the ability to perform in situ and non-destructive RHEED monitoring even on insulating substrates and could enable doped single crystals and crystalline substrates for a range of optoelectronic applications.

LanguageEnglish (US)
Article number40542
JournalScientific Reports
Volume7
DOIs
StatePublished - Jan 10 2017

Profile

metal halides
high energy electrons
electron diffraction
crystals
oscillations
atomic force microscopy
single crystals
doped crystals
emitters
light emitting diodes
room temperature

ASJC Scopus subject areas

  • General

Cite this

Homoepitaxial Growth of Metal Halide Crystals Investigated by Reflection High-Energy Electron Diffraction. / Chen, Pei; Kuttipillai, Padmanaban S.; Wang, Lili; Lunt, Richard R.

In: Scientific Reports, Vol. 7, 40542, 10.01.2017.

Research output: Contribution to journalArticle

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N2 - We report the homoepitaxial growth of a metal halide on single crystals investigated with in situ reflection high-energy electron diffraction (RHEED) and ex situ atomic force microscopy (AFM). Epitaxial growth of NaCl on NaCl (001) is explored as a function of temperature and growth rate which provides the first detailed report of RHEED oscillations for metal halide growth. Layer-by-layer growth is observed at room temperature accompanied by clear RHEED oscillations while the growth mode transitions to an island (3D) mode at low temperature. At higher temperatures (>100 °C), RHEED oscillations and AFM data indicate a transition to a step-flow growth mode. To show the importance of such metal halide growth, green organic light-emitting diodes (OLEDs) are demonstrated using a doped NaCl film with a phosphorescent emitter as the emissive layer. This study demonstrates the ability to perform in situ and non-destructive RHEED monitoring even on insulating substrates and could enable doped single crystals and crystalline substrates for a range of optoelectronic applications.

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