In situ oxygen surface exchange coefficient measurements on lanthanum strontium ferrite thin films via the curvature relaxation method

Qing Yang, Theodore E. Burye, Richard R. Lunt, Jason D. Nicholas

    Research output: Research - peer-reviewArticle

    • 14 Citations

    Abstract

    Here, an in situ curvature relaxation (κR) method was used to measure chemical oxygen surface exchange coefficients (kËœ's) under well-characterized stress, temperature, and oxygen partial pressure conditions. These kËœ's were measured by analyzing the transient curvature of yttria stabilized zirconia supported La0.6Sr0.4FeO 3 - δ thin films reacting to oxygen partial pressure step changes. The sputtered thin film kËœ's measured here were consistent with extrapolated bulk sample kËœ's, but larger than those reported for pulsed laser deposited thin films. This is the first time that the curvature response of a system has been used to characterize thin film oxygen surface exchange kinetics. The simultaneous measurement of film stress and kËœ provided by the curvature relaxation method may help explain the large kËœ discrepancies observed in the literature.

    LanguageEnglish (US)
    Pages123-128
    Number of pages6
    JournalSolid State Ionics
    Volume249-250
    DOIs
    StatePublished - 2013

    Profile

    lanthanum
    strontium
    ferrites
    curvature
    oxygen
    coefficients
    thin films
    Lanthanum
    Strontium
    Ferrite
    Oxygen
    Thin films
    partial pressure
    Partial pressure
    yttria-stabilized zirconia
    pulsed lasers
    kinetics
    temperature
    Yttria stabilized zirconia
    Pulsed lasers

    Keywords

    • Curvature relaxation
    • Lanthanum strontium iron oxide
    • LSF
    • Mechano-chemical coupling
    • Mechano-chemically active
    • Oxygen surface exchange
    • Strain
    • Stress
    • Thin Film

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Chemistry(all)

    Cite this

    @article{f8378681fab4478fa587d846a587eab4,
    title = "In situ oxygen surface exchange coefficient measurements on lanthanum strontium ferrite thin films via the curvature relaxation method",
    abstract = "Here, an in situ curvature relaxation (κR) method was used to measure chemical oxygen surface exchange coefficients (kËœ's) under well-characterized stress, temperature, and oxygen partial pressure conditions. These kËœ's were measured by analyzing the transient curvature of yttria stabilized zirconia supported La0.6Sr0.4FeO 3 - δ thin films reacting to oxygen partial pressure step changes. The sputtered thin film kËœ's measured here were consistent with extrapolated bulk sample kËœ's, but larger than those reported for pulsed laser deposited thin films. This is the first time that the curvature response of a system has been used to characterize thin film oxygen surface exchange kinetics. The simultaneous measurement of film stress and kËœ provided by the curvature relaxation method may help explain the large kËœ discrepancies observed in the literature.",
    keywords = "Curvature relaxation, Lanthanum strontium iron oxide, LSF, Mechano-chemical coupling, Mechano-chemically active, Oxygen surface exchange, Strain, Stress, Thin Film",
    author = "Qing Yang and Burye, {Theodore E.} and Lunt, {Richard R.} and Nicholas, {Jason D.}",
    year = "2013",
    doi = "10.1016/j.ssi.2013.07.025",
    volume = "249-250",
    pages = "123--128",
    journal = "Solid State Ionics",
    issn = "0167-2738",
    publisher = "Elsevier",

    }

    TY - JOUR

    T1 - In situ oxygen surface exchange coefficient measurements on lanthanum strontium ferrite thin films via the curvature relaxation method

    AU - Yang,Qing

    AU - Burye,Theodore E.

    AU - Lunt,Richard R.

    AU - Nicholas,Jason D.

    PY - 2013

    Y1 - 2013

    N2 - Here, an in situ curvature relaxation (κR) method was used to measure chemical oxygen surface exchange coefficients (kËœ's) under well-characterized stress, temperature, and oxygen partial pressure conditions. These kËœ's were measured by analyzing the transient curvature of yttria stabilized zirconia supported La0.6Sr0.4FeO 3 - δ thin films reacting to oxygen partial pressure step changes. The sputtered thin film kËœ's measured here were consistent with extrapolated bulk sample kËœ's, but larger than those reported for pulsed laser deposited thin films. This is the first time that the curvature response of a system has been used to characterize thin film oxygen surface exchange kinetics. The simultaneous measurement of film stress and kËœ provided by the curvature relaxation method may help explain the large kËœ discrepancies observed in the literature.

    AB - Here, an in situ curvature relaxation (κR) method was used to measure chemical oxygen surface exchange coefficients (kËœ's) under well-characterized stress, temperature, and oxygen partial pressure conditions. These kËœ's were measured by analyzing the transient curvature of yttria stabilized zirconia supported La0.6Sr0.4FeO 3 - δ thin films reacting to oxygen partial pressure step changes. The sputtered thin film kËœ's measured here were consistent with extrapolated bulk sample kËœ's, but larger than those reported for pulsed laser deposited thin films. This is the first time that the curvature response of a system has been used to characterize thin film oxygen surface exchange kinetics. The simultaneous measurement of film stress and kËœ provided by the curvature relaxation method may help explain the large kËœ discrepancies observed in the literature.

    KW - Curvature relaxation

    KW - Lanthanum strontium iron oxide

    KW - LSF

    KW - Mechano-chemical coupling

    KW - Mechano-chemically active

    KW - Oxygen surface exchange

    KW - Strain

    KW - Stress

    KW - Thin Film

    UR - http://www.scopus.com/inward/record.url?scp=84883481533&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84883481533&partnerID=8YFLogxK

    U2 - 10.1016/j.ssi.2013.07.025

    DO - 10.1016/j.ssi.2013.07.025

    M3 - Article

    VL - 249-250

    SP - 123

    EP - 128

    JO - Solid State Ionics

    T2 - Solid State Ionics

    JF - Solid State Ionics

    SN - 0167-2738

    ER -