In situ oxygen surface exchange coefficient measurements on lanthanum strontium ferrite thin films via the curvature relaxation method

Qing Yang, Theodore E. Burye, Richard R. Lunt, Jason D. Nicholas

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Abstract

Here, an in situ curvature relaxation (κR) method was used to measure chemical oxygen surface exchange coefficients (kËœ's) under well-characterized stress, temperature, and oxygen partial pressure conditions. These kËœ's were measured by analyzing the transient curvature of yttria stabilized zirconia supported La0.6Sr0.4FeO 3 - δ thin films reacting to oxygen partial pressure step changes. The sputtered thin film kËœ's measured here were consistent with extrapolated bulk sample kËœ's, but larger than those reported for pulsed laser deposited thin films. This is the first time that the curvature response of a system has been used to characterize thin film oxygen surface exchange kinetics. The simultaneous measurement of film stress and kËœ provided by the curvature relaxation method may help explain the large kËœ discrepancies observed in the literature.

LanguageEnglish (US)
Pages123-128
Number of pages6
JournalSolid State Ionics
Volume249-250
DOIs
StatePublished - 2013

Profile

Lanthanum
Strontium
lanthanum
strontium
Ferrite
ferrites
curvature
Oxygen
Thin films
oxygen
coefficients
thin films
Partial pressure
partial pressure
Yttria stabilized zirconia
yttria-stabilized zirconia
Pulsed lasers
pulsed lasers
Kinetics
kinetics

Keywords

  • Curvature relaxation
  • Lanthanum strontium iron oxide
  • LSF
  • Mechano-chemical coupling
  • Mechano-chemically active
  • Oxygen surface exchange
  • Strain
  • Stress
  • Thin Film

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Chemistry(all)

Cite this

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title = "In situ oxygen surface exchange coefficient measurements on lanthanum strontium ferrite thin films via the curvature relaxation method",
abstract = "Here, an in situ curvature relaxation (κR) method was used to measure chemical oxygen surface exchange coefficients (k{\"E}œ's) under well-characterized stress, temperature, and oxygen partial pressure conditions. These k{\"E}œ's were measured by analyzing the transient curvature of yttria stabilized zirconia supported La0.6Sr0.4FeO 3 - δ thin films reacting to oxygen partial pressure step changes. The sputtered thin film k{\"E}œ's measured here were consistent with extrapolated bulk sample k{\"E}œ's, but larger than those reported for pulsed laser deposited thin films. This is the first time that the curvature response of a system has been used to characterize thin film oxygen surface exchange kinetics. The simultaneous measurement of film stress and k{\"E}œ provided by the curvature relaxation method may help explain the large k{\"E}œ discrepancies observed in the literature.",
keywords = "Curvature relaxation, Lanthanum strontium iron oxide, LSF, Mechano-chemical coupling, Mechano-chemically active, Oxygen surface exchange, Strain, Stress, Thin Film",
author = "Qing Yang and Burye, {Theodore E.} and Lunt, {Richard R.} and Nicholas, {Jason D.}",
year = "2013",
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TY - JOUR

T1 - In situ oxygen surface exchange coefficient measurements on lanthanum strontium ferrite thin films via the curvature relaxation method

AU - Yang,Qing

AU - Burye,Theodore E.

AU - Lunt,Richard R.

AU - Nicholas,Jason D.

PY - 2013

Y1 - 2013

N2 - Here, an in situ curvature relaxation (κR) method was used to measure chemical oxygen surface exchange coefficients (kËœ's) under well-characterized stress, temperature, and oxygen partial pressure conditions. These kËœ's were measured by analyzing the transient curvature of yttria stabilized zirconia supported La0.6Sr0.4FeO 3 - δ thin films reacting to oxygen partial pressure step changes. The sputtered thin film kËœ's measured here were consistent with extrapolated bulk sample kËœ's, but larger than those reported for pulsed laser deposited thin films. This is the first time that the curvature response of a system has been used to characterize thin film oxygen surface exchange kinetics. The simultaneous measurement of film stress and kËœ provided by the curvature relaxation method may help explain the large kËœ discrepancies observed in the literature.

AB - Here, an in situ curvature relaxation (κR) method was used to measure chemical oxygen surface exchange coefficients (kËœ's) under well-characterized stress, temperature, and oxygen partial pressure conditions. These kËœ's were measured by analyzing the transient curvature of yttria stabilized zirconia supported La0.6Sr0.4FeO 3 - δ thin films reacting to oxygen partial pressure step changes. The sputtered thin film kËœ's measured here were consistent with extrapolated bulk sample kËœ's, but larger than those reported for pulsed laser deposited thin films. This is the first time that the curvature response of a system has been used to characterize thin film oxygen surface exchange kinetics. The simultaneous measurement of film stress and kËœ provided by the curvature relaxation method may help explain the large kËœ discrepancies observed in the literature.

KW - Curvature relaxation

KW - Lanthanum strontium iron oxide

KW - LSF

KW - Mechano-chemical coupling

KW - Mechano-chemically active

KW - Oxygen surface exchange

KW - Strain

KW - Stress

KW - Thin Film

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U2 - 10.1016/j.ssi.2013.07.025

DO - 10.1016/j.ssi.2013.07.025

M3 - Article

VL - 249-250

SP - 123

EP - 128

JO - Solid State Ionics

T2 - Solid State Ionics

JF - Solid State Ionics

SN - 0167-2738

ER -