Isovalent substitutes play in different ways: Effects of isovalent substitution on the thermoelectric properties of CoSi0.98B0.02

Hui Sun, Xu Lu, Donald T. Morelli

    Research output: Research - peer-reviewArticle

    • 1 Citations

    Abstract

    Boron-added CoSi, CoSi0.98B0.02, possesses a very high thermoelectric power factor of 60 μW cm-1 K-2 at room temperature, which is among the highest power factors that have ever been reported for near-room-temperature thermoelectric applications. Since the electrical properties of this material have been tuned properly, isovalent substitution for its host atoms is intentionally employed to reduce the lattice thermal conductivity while maintaining the electronic properties unchanged. In our previous work, the effect of Rh substitution for Co atoms on the thermoelectric properties of CoSi0.98B0.02 has been studied. Here, we present a study of the substitution of Ge for Si atoms in this compound. Even though Ge and Rh are isovalent with their corresponding host atoms, they play different roles in determining the electrical and thermal transport properties. Through the evaluation of the lattice thermal conductivity by the Debye approximation and the comparison between the high-temperature Seebeck coefficients, we propose that Rh substitution leads to a further overlapping of the conduction and the valence bands, while Ge substitution only shifts the Fermi level upward into the conduction band. Our results show that the influence of isovalent substitution on the electronic structure cannot be ignored when the alloying method is used to improve thermoelectric properties.

    LanguageEnglish (US)
    Article number035107
    JournalJournal of Applied Physics
    Volume120
    Issue number3
    DOIs
    StatePublished - Jul 21 2016

    Profile

    substitutes
    atoms
    thermal conductivity
    room temperature
    Seebeck effect
    alloying
    conduction bands
    boron
    transport properties
    electrical properties
    electronic structure
    valence
    conduction
    evaluation
    shift
    approximation
    electronics

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    @article{bf913e7a1c0d45cb958492ffdeac90e8,
    title = "Isovalent substitutes play in different ways: Effects of isovalent substitution on the thermoelectric properties of CoSi0.98B0.02",
    abstract = "Boron-added CoSi, CoSi0.98B0.02, possesses a very high thermoelectric power factor of 60 μW cm-1 K-2 at room temperature, which is among the highest power factors that have ever been reported for near-room-temperature thermoelectric applications. Since the electrical properties of this material have been tuned properly, isovalent substitution for its host atoms is intentionally employed to reduce the lattice thermal conductivity while maintaining the electronic properties unchanged. In our previous work, the effect of Rh substitution for Co atoms on the thermoelectric properties of CoSi0.98B0.02 has been studied. Here, we present a study of the substitution of Ge for Si atoms in this compound. Even though Ge and Rh are isovalent with their corresponding host atoms, they play different roles in determining the electrical and thermal transport properties. Through the evaluation of the lattice thermal conductivity by the Debye approximation and the comparison between the high-temperature Seebeck coefficients, we propose that Rh substitution leads to a further overlapping of the conduction and the valence bands, while Ge substitution only shifts the Fermi level upward into the conduction band. Our results show that the influence of isovalent substitution on the electronic structure cannot be ignored when the alloying method is used to improve thermoelectric properties.",
    author = "Hui Sun and Xu Lu and Morelli, {Donald T.}",
    year = "2016",
    month = "7",
    doi = "10.1063/1.4959209",
    volume = "120",
    journal = "Journal of Applied Physics",
    issn = "0021-8979",
    publisher = "American Institute of Physics Publising LLC",
    number = "3",

    }

    TY - JOUR

    T1 - Isovalent substitutes play in different ways

    T2 - Journal of Applied Physics

    AU - Sun,Hui

    AU - Lu,Xu

    AU - Morelli,Donald T.

    PY - 2016/7/21

    Y1 - 2016/7/21

    N2 - Boron-added CoSi, CoSi0.98B0.02, possesses a very high thermoelectric power factor of 60 μW cm-1 K-2 at room temperature, which is among the highest power factors that have ever been reported for near-room-temperature thermoelectric applications. Since the electrical properties of this material have been tuned properly, isovalent substitution for its host atoms is intentionally employed to reduce the lattice thermal conductivity while maintaining the electronic properties unchanged. In our previous work, the effect of Rh substitution for Co atoms on the thermoelectric properties of CoSi0.98B0.02 has been studied. Here, we present a study of the substitution of Ge for Si atoms in this compound. Even though Ge and Rh are isovalent with their corresponding host atoms, they play different roles in determining the electrical and thermal transport properties. Through the evaluation of the lattice thermal conductivity by the Debye approximation and the comparison between the high-temperature Seebeck coefficients, we propose that Rh substitution leads to a further overlapping of the conduction and the valence bands, while Ge substitution only shifts the Fermi level upward into the conduction band. Our results show that the influence of isovalent substitution on the electronic structure cannot be ignored when the alloying method is used to improve thermoelectric properties.

    AB - Boron-added CoSi, CoSi0.98B0.02, possesses a very high thermoelectric power factor of 60 μW cm-1 K-2 at room temperature, which is among the highest power factors that have ever been reported for near-room-temperature thermoelectric applications. Since the electrical properties of this material have been tuned properly, isovalent substitution for its host atoms is intentionally employed to reduce the lattice thermal conductivity while maintaining the electronic properties unchanged. In our previous work, the effect of Rh substitution for Co atoms on the thermoelectric properties of CoSi0.98B0.02 has been studied. Here, we present a study of the substitution of Ge for Si atoms in this compound. Even though Ge and Rh are isovalent with their corresponding host atoms, they play different roles in determining the electrical and thermal transport properties. Through the evaluation of the lattice thermal conductivity by the Debye approximation and the comparison between the high-temperature Seebeck coefficients, we propose that Rh substitution leads to a further overlapping of the conduction and the valence bands, while Ge substitution only shifts the Fermi level upward into the conduction band. Our results show that the influence of isovalent substitution on the electronic structure cannot be ignored when the alloying method is used to improve thermoelectric properties.

    UR - http://www.scopus.com/inward/record.url?scp=84979578241&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84979578241&partnerID=8YFLogxK

    U2 - 10.1063/1.4959209

    DO - 10.1063/1.4959209

    M3 - Article

    VL - 120

    JO - Journal of Applied Physics

    JF - Journal of Applied Physics

    SN - 0021-8979

    IS - 3

    M1 - 035107

    ER -