Low-temperature solution-processed solar cells based on PbS colloidal quantum dot/CdS heterojunctions

Liang Yi Chang, Richard R. Lunt, Patrick R. Brown, Vladimir Bulović, Moungi G. Bawendi

    Research output: Contribution to journalArticle

    • 78 Citations

    Abstract

    PbS colloidal quantum dot heterojunction solar cells have shown significant improvements in performance, mostly based on devices that use high-temperature annealed transition metal oxides to create rectifying junctions with quantum dot thin films. Here, we demonstrate a solar cell based on the heterojunction formed between PbS colloidal quantum dot layers and CdS thin films that are deposited via a solution process at 80 C. The resultant device, employing a 1,2-ethanedithiol ligand exchange scheme, exhibits an average power conversion efficiency of 3.5%. Through a combination of thickness-dependent current density-voltage characteristics, optical modeling, and capacitance measurements, the combined diffusion length and depletion width in the PbS quantum dot layer is found to be approximately 170 nm.

    Original languageEnglish (US)
    Pages (from-to)994-999
    Number of pages6
    JournalNano Letters
    Volume13
    Issue number3
    DOIs
    StatePublished - Mar 13 2013

    Profile

    Semiconductor quantum dots
    quantum dots
    Heterojunctions
    Solar cells
    heterojunctions
    solar cells
    Thin films
    Temperature
    thin films
    Capacitance measurement
    Conversion efficiency
    Transition metals
    Current density
    Ligands
    Oxides
    diffusion length
    metal oxides
    depletion
    capacitance
    transition metals

    Keywords

    • CdS
    • chemical bath deposition
    • heterojunction
    • PbS
    • quantum dot
    • solar cell

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Bioengineering
    • Chemistry(all)
    • Materials Science(all)
    • Mechanical Engineering

    Cite this

    Low-temperature solution-processed solar cells based on PbS colloidal quantum dot/CdS heterojunctions. / Chang, Liang Yi; Lunt, Richard R.; Brown, Patrick R.; Bulović, Vladimir; Bawendi, Moungi G.

    In: Nano Letters, Vol. 13, No. 3, 13.03.2013, p. 994-999.

    Research output: Contribution to journalArticle

    Chang LY, Lunt RR, Brown PR, Bulović V, Bawendi MG. Low-temperature solution-processed solar cells based on PbS colloidal quantum dot/CdS heterojunctions. Nano Letters. 2013 Mar 13;13(3):994-999. Available from, DOI: 10.1021/nl3041417

    Chang, Liang Yi; Lunt, Richard R.; Brown, Patrick R.; Bulović, Vladimir; Bawendi, Moungi G. / Low-temperature solution-processed solar cells based on PbS colloidal quantum dot/CdS heterojunctions.

    In: Nano Letters, Vol. 13, No. 3, 13.03.2013, p. 994-999.

    Research output: Contribution to journalArticle

    @article{4a36e9e3f1d84f2ebd5471471688ae74,
    title = "Low-temperature solution-processed solar cells based on PbS colloidal quantum dot/CdS heterojunctions",
    abstract = "PbS colloidal quantum dot heterojunction solar cells have shown significant improvements in performance, mostly based on devices that use high-temperature annealed transition metal oxides to create rectifying junctions with quantum dot thin films. Here, we demonstrate a solar cell based on the heterojunction formed between PbS colloidal quantum dot layers and CdS thin films that are deposited via a solution process at 80 C. The resultant device, employing a 1,2-ethanedithiol ligand exchange scheme, exhibits an average power conversion efficiency of 3.5%. Through a combination of thickness-dependent current density-voltage characteristics, optical modeling, and capacitance measurements, the combined diffusion length and depletion width in the PbS quantum dot layer is found to be approximately 170 nm.",
    keywords = "CdS, chemical bath deposition, heterojunction, PbS, quantum dot, solar cell",
    author = "Chang, {Liang Yi} and Lunt, {Richard R.} and Brown, {Patrick R.} and Vladimir Bulović and Bawendi, {Moungi G.}",
    year = "2013",
    month = "3",
    doi = "10.1021/nl3041417",
    volume = "13",
    pages = "994--999",
    journal = "Nano Letters",
    issn = "1530-6984",
    publisher = "American Chemical Society",
    number = "3",

    }

    TY - JOUR

    T1 - Low-temperature solution-processed solar cells based on PbS colloidal quantum dot/CdS heterojunctions

    AU - Chang,Liang Yi

    AU - Lunt,Richard R.

    AU - Brown,Patrick R.

    AU - Bulović,Vladimir

    AU - Bawendi,Moungi G.

    PY - 2013/3/13

    Y1 - 2013/3/13

    N2 - PbS colloidal quantum dot heterojunction solar cells have shown significant improvements in performance, mostly based on devices that use high-temperature annealed transition metal oxides to create rectifying junctions with quantum dot thin films. Here, we demonstrate a solar cell based on the heterojunction formed between PbS colloidal quantum dot layers and CdS thin films that are deposited via a solution process at 80 C. The resultant device, employing a 1,2-ethanedithiol ligand exchange scheme, exhibits an average power conversion efficiency of 3.5%. Through a combination of thickness-dependent current density-voltage characteristics, optical modeling, and capacitance measurements, the combined diffusion length and depletion width in the PbS quantum dot layer is found to be approximately 170 nm.

    AB - PbS colloidal quantum dot heterojunction solar cells have shown significant improvements in performance, mostly based on devices that use high-temperature annealed transition metal oxides to create rectifying junctions with quantum dot thin films. Here, we demonstrate a solar cell based on the heterojunction formed between PbS colloidal quantum dot layers and CdS thin films that are deposited via a solution process at 80 C. The resultant device, employing a 1,2-ethanedithiol ligand exchange scheme, exhibits an average power conversion efficiency of 3.5%. Through a combination of thickness-dependent current density-voltage characteristics, optical modeling, and capacitance measurements, the combined diffusion length and depletion width in the PbS quantum dot layer is found to be approximately 170 nm.

    KW - CdS

    KW - chemical bath deposition

    KW - heterojunction

    KW - PbS

    KW - quantum dot

    KW - solar cell

    UR - http://www.scopus.com/inward/record.url?scp=84874981096&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84874981096&partnerID=8YFLogxK

    U2 - 10.1021/nl3041417

    DO - 10.1021/nl3041417

    M3 - Article

    VL - 13

    SP - 994

    EP - 999

    JO - Nano Letters

    T2 - Nano Letters

    JF - Nano Letters

    SN - 1530-6984

    IS - 3

    ER -