Abstract
This paper provides fundamental mechanistic insights into the significant piece-to-piece variability that many researchers have reported in the creep response of micron-scale high-Sn SAC solder joints in the as-fabricated state, due to coarse-grained microstructure and the anisotropy of Sn. A multiscale mechanistic creep modeling approach is proposed, by combining the individual contributions of the eutectic Sn-Ag phase and the pro-eutectic Sn dendritic phase. The anisotropic transient creep deformation in the eutectic Sn-Ag phase is termed Tier 1 and is modeled with dislocation mechanics. The creep rate of the pure Sn dendritic phase is similarly modeled with dislocation mechanics and combined with that of the eutectic phase, in Tier 2, using an anisotropic load-sharing scheme that utilizes Eshelby methods and Mori-Tanaka homogenization. The creep rate calculations are performed along the dominant slip systems of the Sn grain in a single crystal of SAC solder material, to obtain the transient creep response of a SAC305 single crystal along global loading directions. This model has been calibrated using experimentally obtained transient creep response of a SAC305 single crystal specimen of a particular orientation and then verified against a second SAC305 single crystal specimen of a different orientation. The effect of grain orientation () on the transient creep response of SAC305 single crystal is parametrically demonstrated by varying one of the Euler angles of the grain.
| Language | English (US) |
|---|---|
| Title of host publication | 2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781479999507 |
| DOIs | |
| State | Published - May 6 2015 |
| Event | 2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2015 - Budapest, Hungary Duration: Apr 19 2015 → Apr 22 2015 |
Other
| Other | 2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2015 |
|---|---|
| Country | Hungary |
| City | Budapest |
| Period | 4/19/15 → 4/22/15 |
Profile
ASJC Scopus subject areas
- Computational Theory and Mathematics
- Electrical and Electronic Engineering
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
Cite this
Multiscale modeling of the anisotropic transient creep response of heterogeneous SAC single crystal. / Mukherjee, S.; Zhou, B.; Dasgupta, A.; Bieler, T. R.
2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7103155.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Multiscale modeling of the anisotropic transient creep response of heterogeneous SAC single crystal
AU - Mukherjee,S.
AU - Zhou,B.
AU - Dasgupta,A.
AU - Bieler,T. R.
PY - 2015/5/6
Y1 - 2015/5/6
N2 - This paper provides fundamental mechanistic insights into the significant piece-to-piece variability that many researchers have reported in the creep response of micron-scale high-Sn SAC solder joints in the as-fabricated state, due to coarse-grained microstructure and the anisotropy of Sn. A multiscale mechanistic creep modeling approach is proposed, by combining the individual contributions of the eutectic Sn-Ag phase and the pro-eutectic Sn dendritic phase. The anisotropic transient creep deformation in the eutectic Sn-Ag phase is termed Tier 1 and is modeled with dislocation mechanics. The creep rate of the pure Sn dendritic phase is similarly modeled with dislocation mechanics and combined with that of the eutectic phase, in Tier 2, using an anisotropic load-sharing scheme that utilizes Eshelby methods and Mori-Tanaka homogenization. The creep rate calculations are performed along the dominant slip systems of the Sn grain in a single crystal of SAC solder material, to obtain the transient creep response of a SAC305 single crystal along global loading directions. This model has been calibrated using experimentally obtained transient creep response of a SAC305 single crystal specimen of a particular orientation and then verified against a second SAC305 single crystal specimen of a different orientation. The effect of grain orientation () on the transient creep response of SAC305 single crystal is parametrically demonstrated by varying one of the Euler angles of the grain.
AB - This paper provides fundamental mechanistic insights into the significant piece-to-piece variability that many researchers have reported in the creep response of micron-scale high-Sn SAC solder joints in the as-fabricated state, due to coarse-grained microstructure and the anisotropy of Sn. A multiscale mechanistic creep modeling approach is proposed, by combining the individual contributions of the eutectic Sn-Ag phase and the pro-eutectic Sn dendritic phase. The anisotropic transient creep deformation in the eutectic Sn-Ag phase is termed Tier 1 and is modeled with dislocation mechanics. The creep rate of the pure Sn dendritic phase is similarly modeled with dislocation mechanics and combined with that of the eutectic phase, in Tier 2, using an anisotropic load-sharing scheme that utilizes Eshelby methods and Mori-Tanaka homogenization. The creep rate calculations are performed along the dominant slip systems of the Sn grain in a single crystal of SAC solder material, to obtain the transient creep response of a SAC305 single crystal along global loading directions. This model has been calibrated using experimentally obtained transient creep response of a SAC305 single crystal specimen of a particular orientation and then verified against a second SAC305 single crystal specimen of a different orientation. The effect of grain orientation () on the transient creep response of SAC305 single crystal is parametrically demonstrated by varying one of the Euler angles of the grain.
UR - http://www.scopus.com/inward/record.url?scp=84944769216&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84944769216&partnerID=8YFLogxK
U2 - 10.1109/EuroSimE.2015.7103155
DO - 10.1109/EuroSimE.2015.7103155
M3 - Conference contribution
BT - 2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2015
PB - Institute of Electrical and Electronics Engineers Inc.
ER -