On the thermoelectric properties of zintl compounds Mg3Bi 2-x Pnx (Pn = P and Sb)

V. Ponnambalam, Donald T. Morelli

Research output: Contribution to journalArticle

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Abstract

A series of Zintl compounds Mg3Bi2-x Pnx (Pn = P and Sb) have been synthesized by the solid-state reaction method. While Sb can be substituted to a level as high as x = 1.0, P can be substituted only up to x = 0.5. The thermoelectric potential of these compounds has been evaluated by measuring resistivity (ρ), Seebeck (α) and Hall coefficients and thermal conductivity between 80 K and 850 K. The measured resistivity and Seebeck coefficient values are consistent with those expected for small-bandgap semiconductors. Hall measurements suggest that the carriers are p type with concentration (p) increasing from ∼1019 cm -3 to ∼1020 cm-3 as the Bi content is increased. The Hall mobility decreases with increasing temperature (T) and reaches a more or less similar value (∼45 cm2/V s) for all substituted compositions at room temperature. Due to mass defect scattering, the lattice thermal conductivity (κL) is decreased to a minimum of ∼1.2 W/m K in Mg3BiSb. The power factor (α 2/ρ) is found to be rather low and falls in the range 0.38 mW/m K2 to 0.66 mW/m K2. As expected, at a high temperature of 825 K, the total thermal conductivity (κ) of Mg3BiSb reaches an impressive value of ∼1.0 W/m K. The highest dimensionless figure of merit (ZT) is realized for Mg3BiSb and is ∼0.4 at 825 K.

LanguageEnglish (US)
Pages1307-1312
Number of pages6
JournalJournal of Electronic Materials
Volume42
Issue number7
DOIs
StatePublished - Jul 2013

Profile

Thermal conductivity
thermal conductivity
Hall mobility
electrical resistivity
Seebeck coefficient
Seebeck effect
Solid state reactions
figure of merit
Temperature
Hall effect
Energy gap
Scattering
Semiconductor materials
solid state
conductivity
Defects
defects
room temperature
coefficients
Chemical analysis

Keywords

  • magnesium bismuthides
  • Seebeck and Hall coefficients
  • Thermoelectrics
  • Zintl phases

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

On the thermoelectric properties of zintl compounds Mg3Bi 2-x Pnx (Pn = P and Sb). / Ponnambalam, V.; Morelli, Donald T.

In: Journal of Electronic Materials, Vol. 42, No. 7, 07.2013, p. 1307-1312.

Research output: Contribution to journalArticle

@article{4c4090ac4cb148d5a2642e86df62aaf6,
title = "On the thermoelectric properties of zintl compounds Mg3Bi 2-x Pnx (Pn = P and Sb)",
abstract = "A series of Zintl compounds Mg3Bi2-x Pnx (Pn = P and Sb) have been synthesized by the solid-state reaction method. While Sb can be substituted to a level as high as x = 1.0, P can be substituted only up to x = 0.5. The thermoelectric potential of these compounds has been evaluated by measuring resistivity (ρ), Seebeck (α) and Hall coefficients and thermal conductivity between 80 K and 850 K. The measured resistivity and Seebeck coefficient values are consistent with those expected for small-bandgap semiconductors. Hall measurements suggest that the carriers are p type with concentration (p) increasing from ∼1019 cm -3 to ∼1020 cm-3 as the Bi content is increased. The Hall mobility decreases with increasing temperature (T) and reaches a more or less similar value (∼45 cm2/V s) for all substituted compositions at room temperature. Due to mass defect scattering, the lattice thermal conductivity (κL) is decreased to a minimum of ∼1.2 W/m K in Mg3BiSb. The power factor (α 2/ρ) is found to be rather low and falls in the range 0.38 mW/m K2 to 0.66 mW/m K2. As expected, at a high temperature of 825 K, the total thermal conductivity (κ) of Mg3BiSb reaches an impressive value of ∼1.0 W/m K. The highest dimensionless figure of merit (ZT) is realized for Mg3BiSb and is ∼0.4 at 825 K.",
keywords = "magnesium bismuthides, Seebeck and Hall coefficients, Thermoelectrics, Zintl phases",
author = "V. Ponnambalam and Morelli, {Donald T.}",
year = "2013",
month = "7",
doi = "10.1007/s11664-012-2417-7",
language = "English (US)",
volume = "42",
pages = "1307--1312",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "7",

}

TY - JOUR

T1 - On the thermoelectric properties of zintl compounds Mg3Bi 2-x Pnx (Pn = P and Sb)

AU - Ponnambalam,V.

AU - Morelli,Donald T.

PY - 2013/7

Y1 - 2013/7

N2 - A series of Zintl compounds Mg3Bi2-x Pnx (Pn = P and Sb) have been synthesized by the solid-state reaction method. While Sb can be substituted to a level as high as x = 1.0, P can be substituted only up to x = 0.5. The thermoelectric potential of these compounds has been evaluated by measuring resistivity (ρ), Seebeck (α) and Hall coefficients and thermal conductivity between 80 K and 850 K. The measured resistivity and Seebeck coefficient values are consistent with those expected for small-bandgap semiconductors. Hall measurements suggest that the carriers are p type with concentration (p) increasing from ∼1019 cm -3 to ∼1020 cm-3 as the Bi content is increased. The Hall mobility decreases with increasing temperature (T) and reaches a more or less similar value (∼45 cm2/V s) for all substituted compositions at room temperature. Due to mass defect scattering, the lattice thermal conductivity (κL) is decreased to a minimum of ∼1.2 W/m K in Mg3BiSb. The power factor (α 2/ρ) is found to be rather low and falls in the range 0.38 mW/m K2 to 0.66 mW/m K2. As expected, at a high temperature of 825 K, the total thermal conductivity (κ) of Mg3BiSb reaches an impressive value of ∼1.0 W/m K. The highest dimensionless figure of merit (ZT) is realized for Mg3BiSb and is ∼0.4 at 825 K.

AB - A series of Zintl compounds Mg3Bi2-x Pnx (Pn = P and Sb) have been synthesized by the solid-state reaction method. While Sb can be substituted to a level as high as x = 1.0, P can be substituted only up to x = 0.5. The thermoelectric potential of these compounds has been evaluated by measuring resistivity (ρ), Seebeck (α) and Hall coefficients and thermal conductivity between 80 K and 850 K. The measured resistivity and Seebeck coefficient values are consistent with those expected for small-bandgap semiconductors. Hall measurements suggest that the carriers are p type with concentration (p) increasing from ∼1019 cm -3 to ∼1020 cm-3 as the Bi content is increased. The Hall mobility decreases with increasing temperature (T) and reaches a more or less similar value (∼45 cm2/V s) for all substituted compositions at room temperature. Due to mass defect scattering, the lattice thermal conductivity (κL) is decreased to a minimum of ∼1.2 W/m K in Mg3BiSb. The power factor (α 2/ρ) is found to be rather low and falls in the range 0.38 mW/m K2 to 0.66 mW/m K2. As expected, at a high temperature of 825 K, the total thermal conductivity (κ) of Mg3BiSb reaches an impressive value of ∼1.0 W/m K. The highest dimensionless figure of merit (ZT) is realized for Mg3BiSb and is ∼0.4 at 825 K.

KW - magnesium bismuthides

KW - Seebeck and Hall coefficients

KW - Thermoelectrics

KW - Zintl phases

UR - http://www.scopus.com/inward/record.url?scp=84879794050&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84879794050&partnerID=8YFLogxK

U2 - 10.1007/s11664-012-2417-7

DO - 10.1007/s11664-012-2417-7

M3 - Article

VL - 42

SP - 1307

EP - 1312

JO - Journal of Electronic Materials

T2 - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 7

ER -