On the thermoelectric properties of zintl compounds Mg3Bi 2-x Pnx (Pn = P and Sb)

V. Ponnambalam, Donald T. Morelli

    Research output: Contribution to journalArticle

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    Abstract

    A series of Zintl compounds Mg3Bi2-x Pnx (Pn = P and Sb) have been synthesized by the solid-state reaction method. While Sb can be substituted to a level as high as x = 1.0, P can be substituted only up to x = 0.5. The thermoelectric potential of these compounds has been evaluated by measuring resistivity (ρ), Seebeck (α) and Hall coefficients and thermal conductivity between 80 K and 850 K. The measured resistivity and Seebeck coefficient values are consistent with those expected for small-bandgap semiconductors. Hall measurements suggest that the carriers are p type with concentration (p) increasing from ∼1019 cm -3 to ∼1020 cm-3 as the Bi content is increased. The Hall mobility decreases with increasing temperature (T) and reaches a more or less similar value (∼45 cm2/V s) for all substituted compositions at room temperature. Due to mass defect scattering, the lattice thermal conductivity (κL) is decreased to a minimum of ∼1.2 W/m K in Mg3BiSb. The power factor (α 2/ρ) is found to be rather low and falls in the range 0.38 mW/m K2 to 0.66 mW/m K2. As expected, at a high temperature of 825 K, the total thermal conductivity (κ) of Mg3BiSb reaches an impressive value of ∼1.0 W/m K. The highest dimensionless figure of merit (ZT) is realized for Mg3BiSb and is ∼0.4 at 825 K.

    Original languageEnglish (US)
    Pages (from-to)1307-1312
    Number of pages6
    JournalJournal of Electronic Materials
    Volume42
    Issue number7
    DOIs
    StatePublished - Jul 2013

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    Keywords

    • magnesium bismuthides
    • Seebeck and Hall coefficients
    • Thermoelectrics
    • Zintl phases

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Materials Chemistry

    Cite this

    On the thermoelectric properties of zintl compounds Mg3Bi 2-x Pnx (Pn = P and Sb). / Ponnambalam, V.; Morelli, Donald T.

    In: Journal of Electronic Materials, Vol. 42, No. 7, 07.2013, p. 1307-1312.

    Research output: Contribution to journalArticle

    Ponnambalam, V.; Morelli, Donald T. / On the thermoelectric properties of zintl compounds Mg3Bi 2-x Pnx (Pn = P and Sb).

    In: Journal of Electronic Materials, Vol. 42, No. 7, 07.2013, p. 1307-1312.

    Research output: Contribution to journalArticle

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    abstract = "A series of Zintl compounds Mg3Bi2-x Pnx (Pn = P and Sb) have been synthesized by the solid-state reaction method. While Sb can be substituted to a level as high as x = 1.0, P can be substituted only up to x = 0.5. The thermoelectric potential of these compounds has been evaluated by measuring resistivity (ρ), Seebeck (α) and Hall coefficients and thermal conductivity between 80 K and 850 K. The measured resistivity and Seebeck coefficient values are consistent with those expected for small-bandgap semiconductors. Hall measurements suggest that the carriers are p type with concentration (p) increasing from ∼1019 cm -3 to ∼1020 cm-3 as the Bi content is increased. The Hall mobility decreases with increasing temperature (T) and reaches a more or less similar value (∼45 cm2/V s) for all substituted compositions at room temperature. Due to mass defect scattering, the lattice thermal conductivity (κL) is decreased to a minimum of ∼1.2 W/m K in Mg3BiSb. The power factor (α 2/ρ) is found to be rather low and falls in the range 0.38 mW/m K2 to 0.66 mW/m K2. As expected, at a high temperature of 825 K, the total thermal conductivity (κ) of Mg3BiSb reaches an impressive value of ∼1.0 W/m K. The highest dimensionless figure of merit (ZT) is realized for Mg3BiSb and is ∼0.4 at 825 K.",
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    N2 - A series of Zintl compounds Mg3Bi2-x Pnx (Pn = P and Sb) have been synthesized by the solid-state reaction method. While Sb can be substituted to a level as high as x = 1.0, P can be substituted only up to x = 0.5. The thermoelectric potential of these compounds has been evaluated by measuring resistivity (ρ), Seebeck (α) and Hall coefficients and thermal conductivity between 80 K and 850 K. The measured resistivity and Seebeck coefficient values are consistent with those expected for small-bandgap semiconductors. Hall measurements suggest that the carriers are p type with concentration (p) increasing from ∼1019 cm -3 to ∼1020 cm-3 as the Bi content is increased. The Hall mobility decreases with increasing temperature (T) and reaches a more or less similar value (∼45 cm2/V s) for all substituted compositions at room temperature. Due to mass defect scattering, the lattice thermal conductivity (κL) is decreased to a minimum of ∼1.2 W/m K in Mg3BiSb. The power factor (α 2/ρ) is found to be rather low and falls in the range 0.38 mW/m K2 to 0.66 mW/m K2. As expected, at a high temperature of 825 K, the total thermal conductivity (κ) of Mg3BiSb reaches an impressive value of ∼1.0 W/m K. The highest dimensionless figure of merit (ZT) is realized for Mg3BiSb and is ∼0.4 at 825 K.

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