On the thermoelectric properties of zintl compounds Mg3Bi 2-x Pnx (Pn = P and Sb)

V. Ponnambalam, Donald T. Morelli

    Research output: Research - peer-reviewArticle

    • 9 Citations

    Abstract

    A series of Zintl compounds Mg3Bi2-x Pnx (Pn = P and Sb) have been synthesized by the solid-state reaction method. While Sb can be substituted to a level as high as x = 1.0, P can be substituted only up to x = 0.5. The thermoelectric potential of these compounds has been evaluated by measuring resistivity (ρ), Seebeck (α) and Hall coefficients and thermal conductivity between 80 K and 850 K. The measured resistivity and Seebeck coefficient values are consistent with those expected for small-bandgap semiconductors. Hall measurements suggest that the carriers are p type with concentration (p) increasing from ∼1019 cm -3 to ∼1020 cm-3 as the Bi content is increased. The Hall mobility decreases with increasing temperature (T) and reaches a more or less similar value (∼45 cm2/V s) for all substituted compositions at room temperature. Due to mass defect scattering, the lattice thermal conductivity (κL) is decreased to a minimum of ∼1.2 W/m K in Mg3BiSb. The power factor (α 2/ρ) is found to be rather low and falls in the range 0.38 mW/m K2 to 0.66 mW/m K2. As expected, at a high temperature of 825 K, the total thermal conductivity (κ) of Mg3BiSb reaches an impressive value of ∼1.0 W/m K. The highest dimensionless figure of merit (ZT) is realized for Mg3BiSb and is ∼0.4 at 825 K.

    LanguageEnglish (US)
    Pages1307-1312
    Number of pages6
    JournalJournal of Electronic Materials
    Volume42
    Issue number7
    DOIs
    StatePublished - Jul 2013

    Profile

    thermal conductivity
    Thermal conductivity
    Temperature
    electrical resistivity
    Seebeck effect
    figure of merit
    Hall effect
    solid state
    conductivity
    defects
    room temperature
    coefficients
    scattering
    temperature
    Hall mobility
    Seebeck coefficient
    Solid state reactions
    Energy gap
    Scattering
    Semiconductor materials

    Keywords

    • magnesium bismuthides
    • Seebeck and Hall coefficients
    • Thermoelectrics
    • Zintl phases

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Materials Chemistry

    Cite this

    On the thermoelectric properties of zintl compounds Mg3Bi 2-x Pnx (Pn = P and Sb). / Ponnambalam, V.; Morelli, Donald T.

    In: Journal of Electronic Materials, Vol. 42, No. 7, 07.2013, p. 1307-1312.

    Research output: Research - peer-reviewArticle

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    abstract = "A series of Zintl compounds Mg3Bi2-x Pnx (Pn = P and Sb) have been synthesized by the solid-state reaction method. While Sb can be substituted to a level as high as x = 1.0, P can be substituted only up to x = 0.5. The thermoelectric potential of these compounds has been evaluated by measuring resistivity (ρ), Seebeck (α) and Hall coefficients and thermal conductivity between 80 K and 850 K. The measured resistivity and Seebeck coefficient values are consistent with those expected for small-bandgap semiconductors. Hall measurements suggest that the carriers are p type with concentration (p) increasing from ∼1019 cm -3 to ∼1020 cm-3 as the Bi content is increased. The Hall mobility decreases with increasing temperature (T) and reaches a more or less similar value (∼45 cm2/V s) for all substituted compositions at room temperature. Due to mass defect scattering, the lattice thermal conductivity (κL) is decreased to a minimum of ∼1.2 W/m K in Mg3BiSb. The power factor (α 2/ρ) is found to be rather low and falls in the range 0.38 mW/m K2 to 0.66 mW/m K2. As expected, at a high temperature of 825 K, the total thermal conductivity (κ) of Mg3BiSb reaches an impressive value of ∼1.0 W/m K. The highest dimensionless figure of merit (ZT) is realized for Mg3BiSb and is ∼0.4 at 825 K.",
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