Phase transformation in self-assembled Gd silicide nanostructures on Si(001)

Gangfeng Ye, Martin A. Crimp, Jun Nogami

    Research output: Research - peer-reviewArticle

    • 1 Citations

    Abstract

    Gd silicide nanostructures epitaxially grown on Si(001) are studied by plan-view transmission electron microscopy and associated nanobeam electron diffraction, as well as scanning tunneling microscopy. The nanobeam diffraction measurements show a direct correlation between the nanostructure morphology, either nanowires or islands, and the silicide crystal structure. Scanning tunneling microscopy shows a phase transformation from nanowires to islands that nucleate at nanowire intersections. A specific mechanism for this transformation is proposed that explains nanowire growth behavior previously observed on vicinal Si surfaces.

    LanguageEnglish (US)
    Pages2276-2281
    Number of pages6
    JournalJournal of Materials Research
    Volume26
    Issue number17
    DOIs
    StatePublished - Aug 28 2011

    Profile

    Nanowires
    Nanostructures
    Phase transitions
    phase transformations
    nanowires
    Scanning tunneling microscopy
    scanning tunneling microscopy
    Electron diffraction
    Diffraction
    Crystal structure
    Transmission electron microscopy
    intersections
    electron diffraction
    transmission electron microscopy
    crystal structure
    diffraction

    Keywords

    • Phase transformation
    • Scanning transmission electron microscopy
    • Scanning tunneling microscopy

    ASJC Scopus subject areas

    • Materials Science(all)
    • Mechanical Engineering
    • Mechanics of Materials
    • Condensed Matter Physics

    Cite this

    Phase transformation in self-assembled Gd silicide nanostructures on Si(001). / Ye, Gangfeng; Crimp, Martin A.; Nogami, Jun.

    In: Journal of Materials Research, Vol. 26, No. 17, 28.08.2011, p. 2276-2281.

    Research output: Research - peer-reviewArticle

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