Progress on preferential etching and phosphorus doping of single crystal diamond

Timothy A. Grotjohn, Dzung T. Tran, M. Kagan Yaran, Thomas Schuelke

Research output: ResearchConference contribution

Abstract

Phosphorus is incorporated into single crystal diamond during epitaxial growth at higher concentrations on the (111) crystallographic surface than on the (001) crystallographic surface. To form n-type regions in diamond for semiconductor devices it is beneficial to deposit on the (111) surface. However, diamond deposition is faster and of higher quality on the (001) surface. A preferential etch method is described that forms inverted pyramids on the (001) surface of a substrate diamond crystal, which opens (111) faces for improved phosphorus incorporation. The preferential etching occurs on the surface in regions where a nickel film is deposited. The etching is performed in a microwave generated hydrogen plasma operating at 160 Torr with the substrate temperature in the range of 800-950 °C. The epitaxial growth of diamond with high phosphorus concentrations exceeding 1020) cm-3 is performed using a microwave plasma-assisted chemical vapor deposition process. Successful growth conditions were achieved with a feedgas mixture of 0.25% methane, 500 ppm phosphine and hydrogen at a pressure of 160 Torr and a substrate temperature of 950-1000°C. The room temperature resistivity of the phosphorus-doped diamond is 120-150 Ω-cm and the activation energy is 0.027 eV.

LanguageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherMaterials Research Society
Pages7-18
Number of pages12
Volume1634
EditionJanuary
DOIs
StatePublished - 2014
Event2013 MRS Fall Meeting - Boston, United States
Duration: Dec 1 2013Dec 6 2013

Other

Other2013 MRS Fall Meeting
CountryUnited States
CityBoston
Period12/1/1312/6/13

Profile

Diamond
Phosphorus
Etching
Doping (additives)
Single crystals
Diamonds
phosphorus
diamonds
etching
single crystals
Substrates
Temperature
Epitaxial growth
Hydrogen
Microwaves
Plasmas
microwaves
temperature
phosphine
Methane

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Grotjohn, T. A., Tran, D. T., Yaran, M. K., & Schuelke, T. (2014). Progress on preferential etching and phosphorus doping of single crystal diamond. In Materials Research Society Symposium Proceedings (January ed., Vol. 1634, pp. 7-18). Materials Research Society. DOI: 10.1557/opl.2014.703

Progress on preferential etching and phosphorus doping of single crystal diamond. / Grotjohn, Timothy A.; Tran, Dzung T.; Yaran, M. Kagan; Schuelke, Thomas.

Materials Research Society Symposium Proceedings. Vol. 1634 January. ed. Materials Research Society, 2014. p. 7-18.

Research output: ResearchConference contribution

Grotjohn, TA, Tran, DT, Yaran, MK & Schuelke, T 2014, Progress on preferential etching and phosphorus doping of single crystal diamond. in Materials Research Society Symposium Proceedings. January edn, vol. 1634, Materials Research Society, pp. 7-18, 2013 MRS Fall Meeting, Boston, United States, 12/1/13. DOI: 10.1557/opl.2014.703
Grotjohn TA, Tran DT, Yaran MK, Schuelke T. Progress on preferential etching and phosphorus doping of single crystal diamond. In Materials Research Society Symposium Proceedings. January ed. Vol. 1634. Materials Research Society. 2014. p. 7-18. Available from, DOI: 10.1557/opl.2014.703
Grotjohn, Timothy A. ; Tran, Dzung T. ; Yaran, M. Kagan ; Schuelke, Thomas. / Progress on preferential etching and phosphorus doping of single crystal diamond. Materials Research Society Symposium Proceedings. Vol. 1634 January. ed. Materials Research Society, 2014. pp. 7-18
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