Self-assembled Gd silicide nanostructures grown on Si(001)

Gangfeng Ye, Martin A. Crimp, Jun Nogami

    Research output: Contribution to journalArticle

    • 7 Citations

    Abstract

    The growth of self-assembled gadolinium silicide nanostructures on Si(001) was studied over a range of metal coverages and growth temperatures. Scanned probe microscopy was used to study the nanostructure morphology. The analyses of cross-sectional transmission electron microscopy images, plan view transmission electron microscopy moiŕ fringe patterns, and nanobeam electron diffraction patterns show that the Gd silicide nanostructures fall into two classes: elongated nanowires with hexagonal crystal structure and rectangular islands with orthorhombic (or tetragonal) crystal structure. These results indicate that the nanostructure morphology is controlled by the magnitude and direction of the lattice mismatch with respect to the substrate. Optimum growth conditions for preferential growth of either nanowires or islands are described. In addition, the phase transformation from hexagonal to the more stable orthorhombic (or tetragonal) phase is observed and discussed.

    Original languageEnglish (US)
    Article number104304
    JournalJournal of Applied Physics
    Volume105
    Issue number10
    DOIs
    StatePublished - 2009

    Profile

    nanowires
    diffraction patterns
    transmission electron microscopy
    crystal structure
    gadolinium
    phase transformations
    electron diffraction
    microscopy
    probes
    metals
    temperature

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Self-assembled Gd silicide nanostructures grown on Si(001). / Ye, Gangfeng; Crimp, Martin A.; Nogami, Jun.

    In: Journal of Applied Physics, Vol. 105, No. 10, 104304, 2009.

    Research output: Contribution to journalArticle

    Ye, Gangfeng; Crimp, Martin A.; Nogami, Jun / Self-assembled Gd silicide nanostructures grown on Si(001).

    In: Journal of Applied Physics, Vol. 105, No. 10, 104304, 2009.

    Research output: Contribution to journalArticle

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