Self-assembled thulium silicide nanostructures on silicon(001) studied by scanning tunneling microscopy and transmission electron microscopy

J. Zhang, M. A. Crimp, Y. Cui, J. Nogami

Research output: Contribution to journalArticle

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Abstract

Since the formation of epitaxial silicide nanowires by deposition of rare earth (RE) metals on Si(001) was first discovered, intense interest has been focused on their growth mechanism. Unlike many of the other nanowire forming RE metals, which have several different polymorphic silicides at about the same stoichiometry, thulium forms three bulk silicides, Tm5 Si3, TmSi, and Tm3 Si5, with very different compositions and crystal structures. Due to their lattice mismatch anisotropy with the substrate when grown on the Si(001) surface, the latter two phases have the potential for nanowire formation. Scanning tunneling microscopy shows the formation of both nanowires and larger square islands. Cross-sectional high resolution transmission electron microscopy reveals both orthorhombic TmSi and hexagonal Tm3 Si5, forming nanostructures either as connected neighboring structures or as overlapping structures. The coexistence of layers of both silicides in many nanostructures suggests a new mechanism for strain relief at the interface with the substrate.

LanguageEnglish (US)
Article number064308
JournalJournal of Applied Physics
Volume103
Issue number6
DOIs
StatePublished - 2008

Profile

thulium
silicides
scanning tunneling microscopy
nanowires
transmission electron microscopy
silicon
rare earth elements
metals
stoichiometry
anisotropy
crystal structure
high resolution

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Self-assembled thulium silicide nanostructures on silicon(001) studied by scanning tunneling microscopy and transmission electron microscopy. / Zhang, J.; Crimp, M. A.; Cui, Y.; Nogami, J.

In: Journal of Applied Physics, Vol. 103, No. 6, 064308, 2008.

Research output: Contribution to journalArticle

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abstract = "Since the formation of epitaxial silicide nanowires by deposition of rare earth (RE) metals on Si(001) was first discovered, intense interest has been focused on their growth mechanism. Unlike many of the other nanowire forming RE metals, which have several different polymorphic silicides at about the same stoichiometry, thulium forms three bulk silicides, Tm5 Si3, TmSi, and Tm3 Si5, with very different compositions and crystal structures. Due to their lattice mismatch anisotropy with the substrate when grown on the Si(001) surface, the latter two phases have the potential for nanowire formation. Scanning tunneling microscopy shows the formation of both nanowires and larger square islands. Cross-sectional high resolution transmission electron microscopy reveals both orthorhombic TmSi and hexagonal Tm3 Si5, forming nanostructures either as connected neighboring structures or as overlapping structures. The coexistence of layers of both silicides in many nanostructures suggests a new mechanism for strain relief at the interface with the substrate.",
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