SiC-based cermet with electrically conductive grain boundaries

M. Balog, J. Kováč, A. Šatka, D. Haško, J. Zhang, M. A. Crimp, O. Vávra, I. Vávra

Research output: Contribution to journalArticle

  • 4 Citations

Abstract

The present paper deals with the characterization of structural and electrical properties of SiC-based cermets prepared by in situ reaction. The surface structure and electrical conductivity of the samples was investigated by the standard four-point probe method, SEM, TEM, AFM, and STM techniques. It was found that the electrical conductivity of the SiC-based ceramic-metal composites increases with increased fraction of metallic phases. Interestingly, samples containing app. 12 vol.% of non-percolated (isolated) metallic phases exhibit up to 2 orders of magnitude better electrical conductivity compared with the base-line liquid phase sintered SiC (LPS SiC). This effect results from doping of the SiC grains by diffusion of metallic components as well as from chemical modification of the grain boundary phases due to the reaction of sintering aids and metallic particles at high sintering temperatures. Absorbed current measurements using SEM, as well as AFM in spreading resistance and STM in tunneling mode were used for visualization of electrical pathways.

LanguageEnglish (US)
Pages420-426
Number of pages7
JournalMaterials Characterization
Volume61
Issue number4
DOIs
StatePublished - Apr 2010

Profile

Cermet Cements
cermets
Grain boundaries
grain boundaries
Cermets
electrical resistivity
sintering
Sintering
atomic force microscopy
Scanning electron microscopy
scanning electron microscopy
Chemical modification
Electric current measurement
Application programs
Surface structure
Structural properties
liquid phases
Electric properties
Visualization
electrical properties

Keywords

  • AFM
  • Cermets
  • Diffusion
  • Electrical conductivity
  • Grain boundaries
  • SEM
  • STM
  • TEM

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Balog, M., Kováč, J., Šatka, A., Haško, D., Zhang, J., Crimp, M. A., ... Vávra, I. (2010). SiC-based cermet with electrically conductive grain boundaries. Materials Characterization, 61(4), 420-426. DOI: 10.1016/j.matchar.2010.01.010

SiC-based cermet with electrically conductive grain boundaries. / Balog, M.; Kováč, J.; Šatka, A.; Haško, D.; Zhang, J.; Crimp, M. A.; Vávra, O.; Vávra, I.

In: Materials Characterization, Vol. 61, No. 4, 04.2010, p. 420-426.

Research output: Contribution to journalArticle

Balog, M, Kováč, J, Šatka, A, Haško, D, Zhang, J, Crimp, MA, Vávra, O & Vávra, I 2010, 'SiC-based cermet with electrically conductive grain boundaries' Materials Characterization, vol 61, no. 4, pp. 420-426. DOI: 10.1016/j.matchar.2010.01.010
Balog M, Kováč J, Šatka A, Haško D, Zhang J, Crimp MA et al. SiC-based cermet with electrically conductive grain boundaries. Materials Characterization. 2010 Apr;61(4):420-426. Available from, DOI: 10.1016/j.matchar.2010.01.010
Balog, M. ; Kováč, J. ; Šatka, A. ; Haško, D. ; Zhang, J. ; Crimp, M. A. ; Vávra, O. ; Vávra, I./ SiC-based cermet with electrically conductive grain boundaries. In: Materials Characterization. 2010 ; Vol. 61, No. 4. pp. 420-426
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