The impact of microstructure evolution, localized recrystallization and board thickness on Sn-Ag-Cu interconnect board level shock performance

Tae Kyu Lee, Weidong Xie, Thomas R. Bieler, Choong Un Kim

    Research output: ResearchConference contribution

    • 1 Citations

    Abstract

    The mechanical stability of solder joints with SnAgCu alloy on various board thicknesses were investigated in a high G level shock environment. A test vehicle with 31mil, 62mil and 93mil board thickness, which has three different strain and shock level condition combination per board, was used to identify the joint stability and failure modes. The results revealed that joint stability is sensitive to board thickness and that the first failure location shift from the corner location near the stand off to the center with increased board thickness. Also the impact of isothermal aging and fine grain structure transformation on mechanical shock performance of solder joints were investigated. The results revealed that joint stability during shock loading is sensitive to the level of shock that can be absorbed during each shock cycle based on the capability of single to multi grain transformation. The localized fine grain structure distributions were analyzed to identify correlations between the microstructure evolution and shock performance.

    LanguageEnglish (US)
    Title of host publicationProceedings - Electronic Components and Technology Conference
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages697-702
    Number of pages6
    ISBN (Print)9781479924073
    DOIs
    StatePublished - Sep 11 2014
    Event64th Electronic Components and Technology Conference, ECTC 2014 - Orlando, United States
    Duration: May 27 2014May 30 2014

    Other

    Other64th Electronic Components and Technology Conference, ECTC 2014
    CountryUnited States
    CityOrlando
    Period5/27/145/30/14

    Profile

    Microstructure
    Crystal microstructure
    Soldering alloys
    Mechanical stability
    Failure modes
    Aging of materials

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

    Cite this

    Lee, T. K., Xie, W., Bieler, T. R., & Kim, C. U. (2014). The impact of microstructure evolution, localized recrystallization and board thickness on Sn-Ag-Cu interconnect board level shock performance. In Proceedings - Electronic Components and Technology Conference (pp. 697-702). [6897360] Institute of Electrical and Electronics Engineers Inc.. DOI: 10.1109/ECTC.2014.6897360

    The impact of microstructure evolution, localized recrystallization and board thickness on Sn-Ag-Cu interconnect board level shock performance. / Lee, Tae Kyu; Xie, Weidong; Bieler, Thomas R.; Kim, Choong Un.

    Proceedings - Electronic Components and Technology Conference. Institute of Electrical and Electronics Engineers Inc., 2014. p. 697-702 6897360.

    Research output: ResearchConference contribution

    Lee, TK, Xie, W, Bieler, TR & Kim, CU 2014, The impact of microstructure evolution, localized recrystallization and board thickness on Sn-Ag-Cu interconnect board level shock performance. in Proceedings - Electronic Components and Technology Conference., 6897360, Institute of Electrical and Electronics Engineers Inc., pp. 697-702, 64th Electronic Components and Technology Conference, ECTC 2014, Orlando, United States, 5/27/14. DOI: 10.1109/ECTC.2014.6897360
    Lee TK, Xie W, Bieler TR, Kim CU. The impact of microstructure evolution, localized recrystallization and board thickness on Sn-Ag-Cu interconnect board level shock performance. In Proceedings - Electronic Components and Technology Conference. Institute of Electrical and Electronics Engineers Inc.2014. p. 697-702. 6897360. Available from, DOI: 10.1109/ECTC.2014.6897360
    Lee, Tae Kyu ; Xie, Weidong ; Bieler, Thomas R. ; Kim, Choong Un. / The impact of microstructure evolution, localized recrystallization and board thickness on Sn-Ag-Cu interconnect board level shock performance. Proceedings - Electronic Components and Technology Conference. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 697-702
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