The impact of microstructure evolution, localized recrystallization and board thickness on Sn-Ag-Cu interconnect board level shock performance

Tae Kyu Lee, Weidong Xie, Thomas R. Bieler, Choong Un Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 1 Citations

Abstract

The mechanical stability of solder joints with SnAgCu alloy on various board thicknesses were investigated in a high G level shock environment. A test vehicle with 31mil, 62mil and 93mil board thickness, which has three different strain and shock level condition combination per board, was used to identify the joint stability and failure modes. The results revealed that joint stability is sensitive to board thickness and that the first failure location shift from the corner location near the stand off to the center with increased board thickness. Also the impact of isothermal aging and fine grain structure transformation on mechanical shock performance of solder joints were investigated. The results revealed that joint stability during shock loading is sensitive to the level of shock that can be absorbed during each shock cycle based on the capability of single to multi grain transformation. The localized fine grain structure distributions were analyzed to identify correlations between the microstructure evolution and shock performance.

LanguageEnglish (US)
Title of host publicationProceedings - Electronic Components and Technology Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages697-702
Number of pages6
ISBN (Print)9781479924073
DOIs
StatePublished - Sep 11 2014
Event64th Electronic Components and Technology Conference, ECTC 2014 - Orlando, United States
Duration: May 27 2014May 30 2014

Other

Other64th Electronic Components and Technology Conference, ECTC 2014
CountryUnited States
CityOrlando
Period5/27/145/30/14

Profile

Crystal microstructure
Soldering alloys
Microstructure
Mechanical stability
Failure modes
Aging of materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Lee, T. K., Xie, W., Bieler, T. R., & Kim, C. U. (2014). The impact of microstructure evolution, localized recrystallization and board thickness on Sn-Ag-Cu interconnect board level shock performance. In Proceedings - Electronic Components and Technology Conference (pp. 697-702). [6897360] Institute of Electrical and Electronics Engineers Inc.. DOI: 10.1109/ECTC.2014.6897360

The impact of microstructure evolution, localized recrystallization and board thickness on Sn-Ag-Cu interconnect board level shock performance. / Lee, Tae Kyu; Xie, Weidong; Bieler, Thomas R.; Kim, Choong Un.

Proceedings - Electronic Components and Technology Conference. Institute of Electrical and Electronics Engineers Inc., 2014. p. 697-702 6897360.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, TK, Xie, W, Bieler, TR & Kim, CU 2014, The impact of microstructure evolution, localized recrystallization and board thickness on Sn-Ag-Cu interconnect board level shock performance. in Proceedings - Electronic Components and Technology Conference., 6897360, Institute of Electrical and Electronics Engineers Inc., pp. 697-702, 64th Electronic Components and Technology Conference, ECTC 2014, Orlando, United States, 5/27/14. DOI: 10.1109/ECTC.2014.6897360
Lee TK, Xie W, Bieler TR, Kim CU. The impact of microstructure evolution, localized recrystallization and board thickness on Sn-Ag-Cu interconnect board level shock performance. In Proceedings - Electronic Components and Technology Conference. Institute of Electrical and Electronics Engineers Inc.2014. p. 697-702. 6897360. Available from, DOI: 10.1109/ECTC.2014.6897360
Lee, Tae Kyu ; Xie, Weidong ; Bieler, Thomas R. ; Kim, Choong Un. / The impact of microstructure evolution, localized recrystallization and board thickness on Sn-Ag-Cu interconnect board level shock performance. Proceedings - Electronic Components and Technology Conference. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 697-702
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