The role of simultaneous substitution of Cr and Ru on the thermoelectric properties of defect manganese silicides MnSiδ (1.73 <δ <1.75)

V. Ponnambalam, Donald T. Morelli, S. Bhattacharya, Terry M. Tritt

    Research output: Research - peer-reviewArticle

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    Abstract

    Defect manganese silicides have been substituted with Cr and Ru, in order to study the role of these substitutions on the resulting resistivity (q), Seebeck (a) and Hall coefficients and thermal conductivity. The resistivity and Seebeck coefficient measurements suggest that these compounds are degenerate semiconductors. The Hall measurements indicate that the carrier concentration increases in Cr and Ru substituted compounds. The majority carriers are holes and the change of hole concentration is only marginal. While the hole concentration (p) of MnSi1.74 is ∼ 2.1 × 1021 cm -3, in heavily substituted Mn0.65Cr0.2Ru0.15Si1.74, p increases only to ∼4.5 × 1021 cm -3. The increase in p is presumably due to Si precipitation. One interesting feature is the low lattice thermal conductivity (jL) which is 2-2.5 W/m K at 300 K depending upon the composition. In addition, jL shows a weak temperature dependence. Because of the combination of high power factor (a2/q) 2 mW/m K2 and low thermal conductivity 2.5-2.7 W/m K, Mn0.95Cr0.5Si1.74 and Mn0.97Cr0.3Si1.74 exhibit highest ZT of 0.6 at 850 K. For other compounds, a moderate ZT value of 0.3-0.5 is realized at 850 K. In Ru substituted compounds, the ZT is not improved beyond 0.5, due to the decrease of charge carrier mobility.

    LanguageEnglish (US)
    Pages598-603
    Number of pages6
    JournalJournal of Alloys and Compounds
    Volume580
    DOIs
    StatePublished - 2013

    Profile

    Silicides
    Manganese
    Thermal conductivity
    Substitution reactions
    Defects
    Hole concentration
    Seebeck coefficient
    Carrier mobility
    Charge carriers
    Carrier concentration
    Semiconductor materials
    Chemical analysis
    Temperature

    Keywords

    • Hall coefficient
    • Higher manganese silicides
    • Resistivity
    • Seebeck coefficient
    • Thermoelectrics

    ASJC Scopus subject areas

    • Mechanical Engineering
    • Mechanics of Materials
    • Materials Chemistry
    • Metals and Alloys

    Cite this

    The role of simultaneous substitution of Cr and Ru on the thermoelectric properties of defect manganese silicides MnSiδ (1.73 <δ <1.75). / Ponnambalam, V.; Morelli, Donald T.; Bhattacharya, S.; Tritt, Terry M.

    In: Journal of Alloys and Compounds, Vol. 580, 2013, p. 598-603.

    Research output: Research - peer-reviewArticle

    @article{45bbecf5ca654c3584246522e8814f90,
    title = "The role of simultaneous substitution of Cr and Ru on the thermoelectric properties of defect manganese silicides MnSiδ (1.73 <δ <1.75)",
    abstract = "Defect manganese silicides have been substituted with Cr and Ru, in order to study the role of these substitutions on the resulting resistivity (q), Seebeck (a) and Hall coefficients and thermal conductivity. The resistivity and Seebeck coefficient measurements suggest that these compounds are degenerate semiconductors. The Hall measurements indicate that the carrier concentration increases in Cr and Ru substituted compounds. The majority carriers are holes and the change of hole concentration is only marginal. While the hole concentration (p) of MnSi1.74 is ∼ 2.1 × 1021 cm -3, in heavily substituted Mn0.65Cr0.2Ru0.15Si1.74, p increases only to ∼4.5 × 1021 cm -3. The increase in p is presumably due to Si precipitation. One interesting feature is the low lattice thermal conductivity (jL) which is 2-2.5 W/m K at 300 K depending upon the composition. In addition, jL shows a weak temperature dependence. Because of the combination of high power factor (a2/q) 2 mW/m K2 and low thermal conductivity 2.5-2.7 W/m K, Mn0.95Cr0.5Si1.74 and Mn0.97Cr0.3Si1.74 exhibit highest ZT of 0.6 at 850 K. For other compounds, a moderate ZT value of 0.3-0.5 is realized at 850 K. In Ru substituted compounds, the ZT is not improved beyond 0.5, due to the decrease of charge carrier mobility.",
    keywords = "Hall coefficient, Higher manganese silicides, Resistivity, Seebeck coefficient, Thermoelectrics",
    author = "V. Ponnambalam and Morelli, {Donald T.} and S. Bhattacharya and Tritt, {Terry M.}",
    year = "2013",
    doi = "10.1016/j.jallcom.2013.07.136",
    volume = "580",
    pages = "598--603",
    journal = "Journal of Alloys and Compounds",
    issn = "0925-8388",
    publisher = "Elsevier BV",

    }

    TY - JOUR

    T1 - The role of simultaneous substitution of Cr and Ru on the thermoelectric properties of defect manganese silicides MnSiδ (1.73 <δ <1.75)

    AU - Ponnambalam,V.

    AU - Morelli,Donald T.

    AU - Bhattacharya,S.

    AU - Tritt,Terry M.

    PY - 2013

    Y1 - 2013

    N2 - Defect manganese silicides have been substituted with Cr and Ru, in order to study the role of these substitutions on the resulting resistivity (q), Seebeck (a) and Hall coefficients and thermal conductivity. The resistivity and Seebeck coefficient measurements suggest that these compounds are degenerate semiconductors. The Hall measurements indicate that the carrier concentration increases in Cr and Ru substituted compounds. The majority carriers are holes and the change of hole concentration is only marginal. While the hole concentration (p) of MnSi1.74 is ∼ 2.1 × 1021 cm -3, in heavily substituted Mn0.65Cr0.2Ru0.15Si1.74, p increases only to ∼4.5 × 1021 cm -3. The increase in p is presumably due to Si precipitation. One interesting feature is the low lattice thermal conductivity (jL) which is 2-2.5 W/m K at 300 K depending upon the composition. In addition, jL shows a weak temperature dependence. Because of the combination of high power factor (a2/q) 2 mW/m K2 and low thermal conductivity 2.5-2.7 W/m K, Mn0.95Cr0.5Si1.74 and Mn0.97Cr0.3Si1.74 exhibit highest ZT of 0.6 at 850 K. For other compounds, a moderate ZT value of 0.3-0.5 is realized at 850 K. In Ru substituted compounds, the ZT is not improved beyond 0.5, due to the decrease of charge carrier mobility.

    AB - Defect manganese silicides have been substituted with Cr and Ru, in order to study the role of these substitutions on the resulting resistivity (q), Seebeck (a) and Hall coefficients and thermal conductivity. The resistivity and Seebeck coefficient measurements suggest that these compounds are degenerate semiconductors. The Hall measurements indicate that the carrier concentration increases in Cr and Ru substituted compounds. The majority carriers are holes and the change of hole concentration is only marginal. While the hole concentration (p) of MnSi1.74 is ∼ 2.1 × 1021 cm -3, in heavily substituted Mn0.65Cr0.2Ru0.15Si1.74, p increases only to ∼4.5 × 1021 cm -3. The increase in p is presumably due to Si precipitation. One interesting feature is the low lattice thermal conductivity (jL) which is 2-2.5 W/m K at 300 K depending upon the composition. In addition, jL shows a weak temperature dependence. Because of the combination of high power factor (a2/q) 2 mW/m K2 and low thermal conductivity 2.5-2.7 W/m K, Mn0.95Cr0.5Si1.74 and Mn0.97Cr0.3Si1.74 exhibit highest ZT of 0.6 at 850 K. For other compounds, a moderate ZT value of 0.3-0.5 is realized at 850 K. In Ru substituted compounds, the ZT is not improved beyond 0.5, due to the decrease of charge carrier mobility.

    KW - Hall coefficient

    KW - Higher manganese silicides

    KW - Resistivity

    KW - Seebeck coefficient

    KW - Thermoelectrics

    UR - http://www.scopus.com/inward/record.url?scp=84882330671&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84882330671&partnerID=8YFLogxK

    U2 - 10.1016/j.jallcom.2013.07.136

    DO - 10.1016/j.jallcom.2013.07.136

    M3 - Article

    VL - 580

    SP - 598

    EP - 603

    JO - Journal of Alloys and Compounds

    T2 - Journal of Alloys and Compounds

    JF - Journal of Alloys and Compounds

    SN - 0925-8388

    ER -